Results for 80N06(3,184)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| AM80N06-05D | TY/台灣半導体 | 2618+ | 25,348 | TON/A252 | |
| AM80N06-05D | ANALOGPOWER | 19+ | 17,563 | TON/A252 | |
| AM80N06-05D | ANALOGPOWER | 19+ | 32,500 | TON/A252 | |
| AM80N06-05D | ANALOGPOWER | 23+ | 360,000 | TON/A252 | |
| AM80N06-05D | ANALOG POWER/美商亚柏 | 2025+ | 30,083 | TO252 | |
| AM80N06-05D | AnalogPower美商亚柏 | N/A | 103 | TON/A252 | |
| AM80N06-05D | ANALOGPOW | 22+ | 18,655 | TON/A252 | |
| AM80N06-05D | ONGIAMI安佳美 | 24+ | 50,000 | TON/A252 | |
| AM80N06-05D | AnalogPow | 19+ | 35,000 | TON/A252 | |
| AM80N06-05D | ANALOGPOWER | 22+ | 36,673 | TON/A252 | |
| AM80N06-05D-T1-PF | SK/森浦科 | 24+ | 59,554 | TON/A252 | |
| AM80N06-05D-T1-PF | ANALOGPOWER | 14+ | 386 | TON/A252 | |
| AM80N06-05D-T1-PF | ANALOG POWER/美商亚柏 | 23+ | 52,388 | TON/A252 | |
| AM80N06-05D-T1-PF | ANALOGPOWER | 15+ | 50 | TON/A252 | |
| AM80N06-05D-T1-PF | 台产 | 25+ | 61,600 | TON/A252 | |
| AM80N06-05D-T1-PF | ANALOGPOWER | 2025+ | 360,000 | TON/A252 | |
| AM80N06-05D-T1-PF | ANALOGPOWER | 24+ | 43,800 | TON/A252 | |
| AM80N06-05D-T1-PF | COVASON/昌贯 | 25+ | 38,165 | TON/A252 | |
| AM80N06-05D-T1-PF | ANALOGPOWER | 22+ | 36,675 | TON/A252 | |
| BR80N06 | BR/蓝箭 | 22+ | 25,000 | TON/A220 | |
| BR80N06 | N/A | 22+ | 1 | NA | |
| BR80N06 | BR/蓝箭 | 23+ | 33,226 | TON/A220 | |
| BR80N06 | BR/蓝箭 | 2517+ | 79,999 | TON/A220 | |
| BR80N06 | JR | 25+ | 236,268 | TON/A220TON/A3P252 | |
| BR80N06 | BR/蓝箭 | 25+ | 68,500 | TO220 | |
| BR80N06 | VBSEMI/微碧半导体 | 23+ | 52,388 | TO220 | |
| BR80N06 | XGT | 17+ | 1 | NA | |
| CMB80N06 | CMOS/场效应半导体 | 17+ | 280 | TON/A263 | |
| CMB80N06 | CMB | 1515+ | 200 | TON/A252 | |
| CMB80N06 | HUAYI/华羿微 | 2025+ | 288 | TON/A263 | |
| CMB80N06 | CMOS/场效应半导体 | 25+ | 68,500 | TO263 | |
| CMB80N06 | CMOS/场效应半导体 | 2149+ | 156 | TON/A263 | |
| CMB80N06 | CMOS/场效应半导体 | 23+ | 52,388 | TON/A263 | |
| CMB80N06 | JR | 25+ | 236,271 | TON/A220TON/A3P252 | |
| CMB80N06 | CET/華瑞 | 22+ | 9,800 | TON/A263 | |
| CMP80N06 | PERSEMI | 22+ | 28,000 | TON/A220 | |
| CMP80N06 | CMOS/场效应半导体 | 2025+ | 474 | TON/A220 | |
| CMP80N06 | CMOS/场效应半导体 | 25+ | 2,000 | TON/A220 | |
| CMP80N06 | CMP | N/A | 92 | TON/A220 | |
| CMP80N06 | CMOS/场效应半导体 | 20+ | 87,700 | TON/A220 | |
| CMP80N06 | CMOS/场效应半导体 | 2021+ | 240 | TON/A220 | |
| CMP80N06 | JR | 25+ | 236,272 | TON/A220TON/A3P252 | |
| CMP80N06 | CMOS/场效应半导体 | 25+ | 68,500 | TO220 | |
| CMP80N06 | CMP | 20+ | 3,399 | TON/A220 | |
| CMP80N06 | NINEZERO | 26+ | 60,600 | SMD | |
| CMP80N06 | XGT | 17+ | 1 | NA | |
| CMP80N06 | N/A | 22+ | 1 | NA | |
| CMP80N06 | 台产 | 25+ | 60,600 | TON/A220 | |
| CMP80N06 | CMOS/场效应半导体 | 26+ | 6,568 | TON/A220 | |
| CMP80N06 | CMOS/场效应半导体 | 24+ | 12,000 | TON/A220 |
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