Results for AE2002(55)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| AE2002 | PULSE/普思 | 1712+ | 748 | SMD | |
| AE2002 | PULSE/普思 | 22+ | 10,000 | SMD | |
| AE2002 | PULSE/普思 | 25+ | 16,500 | SOP16 | |
| AE2002 | PULSE/普思 | 23+24+ | 2,490 | SMD | |
| AE2002 | PULSE/普思 | 21+ | 210 | SMD | |
| AE2002 | PULSE/普思 | 1733+ | 251 | SMD | |
| AE2002 | PULSE/普思 | 16+ | 500 | N/A | |
| AE2002 | PULSE/普思 | 21+ | 2,012 | SMD | |
| AE2002 | PULSE/普思 | 25+ | 326,547 | SMT | |
| AE2002 | PULSE/普思 | 23+ | 2,500 | SMD | |
| AE2002 | PULSE/普思 | 17+ | 15 | SMD | |
| AE2002 | PULSE/普思 | 25+ | 2,500 | N/A | |
| AE2002 | PULSE/普思 | 18+ | 129 | SMD | |
| AE2002 | PULSE/普思 | 17+ | 1,027 | SMD | |
| AE2002 | PULSE/普思 | 21+ | 2,012 | SMD | |
| AE2002 | PULSE/普思 | 24+ | 5,000 | N/A | |
| AE2002 | PULSE/普思 | 23+24+ | 2,490 | SMD | |
| AE2002 | PULSE/普思 | 21+ | 5,000 | SMD | |
| AE2002 | PULSE/普思 | 25+ | 10,000 | SMD | |
| AE2002 | PUISe | 23+ | 20,000 | SOP | |
| AE2002 | PULSE/普思 | 19+ | 480 | SMD | |
| AE2002 | PULSE/普思 | 26+ | 30,000 | N/A | |
| AE2002 | PULSE/普思 | 18+ | 3,039 | SMD | |
| AE2002 | PULSE/普思 | 18+ | 30 | SMD | |
| AE2002 | PULSE/普思 | 2017 | 2,500 | SMD | |
| CJAE2002 | Jingliwei | 26+ | 100,000 | DFNWB3x3N/A8L | |
| CJAE2002 | CJ/长晶 | 26+ | 69,000 | SMD | |
| CJAE2002 | CJ/长电 | 24+ | 88,000 | DFNWB33N/A8L | |
| CJAE2002 | CJ/长晶 | 26+ | 200,000 | DFN3x3 | |
| CJAE2002 | 裕城半导体 | 24+ | 90,000 | DFNWB33N/A8L | |
| CJAE2002 | CJ/长晶 | 26+ | 31,343 | DFNWB3×3N/A8L | |
| CJAE2002 | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB33N/A8L | |
| CJAE2002 | HAMOS/汉姆 | 25+ | 30,000 | PDFN3N/A3 | |
| CJAE2002 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFNWB33N/A8LN/AJ | |
| CJAE2002 | CJ/长晶 | 25+26+ | 100,000 | N/A | |
| CJAE2002 | LMSEMI/砺马 | 25+ | 89,722 | TDFNN/A8N/AEP(3x3) | |
| CJAE2002 | CJ/长晶 | 25+ | 52,310 | DFNWB3x3N/A8LN/AJ | |
| CJAE2002 | 子明微科技 | 24+ | 90,000 | DFNWB3×3N/A8L | |
| CJAE2002 | JSCJ长晶科技CJ长电 | 21+ | 150,000 | DFNWB3x3N/A8LN/AJ | |
| CJAE2002 | 昕晟微 | 22 | 100,000 | DFNWB33N/A8LN/AJ | |
| CJAE2002 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | DFNWB3×3N/A8L | |
| CJAE2002 | CJ/长晶 | 2025+ | 33,000 | DFNWB33N/A8LN/AJ | |
| CJAE2002 | 无 | N/A | 165,000 | DFN3 | |
| CJAE2002 | TY/台灣半導体 | 2618+ | 50,348 | DFN3N/A3N/A8L | |
| CJAE2002 | 长晶科技/CJ | 25+ | 40,000 | DFN | |
| CJAE2002 | CJ/长晶 | 2025+ | 360,000 | DFNWB33N/A8L | |
| CJAE2002 | CJ/长晶 | 2025+ | 360,000 | DFNWB33N/A8LN/AJ | |
| CJAE2002 | CJ/长晶 | 21+ | 135,980 | DFNWB3 3N/A8 | |
| CJAE2002 | TSD/泰盛达 | 26+ | 30,000 | DFNWB33N/A8LN/AJ | |
| CJAE2002 | LMSEMI/砺马 | 25+ | 30,000 | TDFNN/A8N/AEP(3x3) |
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