Results for AZ23C9V1(68)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| AZ23C9V1 | MAKOSEMI | 15+ | 800,004,020 | SOTN/A23 | |
| AZ23C9V1 | PANJIT/强茂 | 24+ | 18,000 | SOTN/A23 | |
| AZ23C9V1 | MICROCHIP/微芯 | 1542+ | 52,520 | SOTN/A23 | |
| AZ23C9V1 | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| AZ23C9V1 | CJ/长晶 | 2025+ | 60,000 | SOTN/A23 | |
| AZ23C9V1 | JXND/嘉兴南电 | 26+ | 100,000 | SOTN/A23 | |
| AZ23C9V1 | CJ/Lastinght | N/A | 180,000 | SOTN/A23 | |
| AZ23C9V1 | 宝浦莱/POPPULA | 25+ | 120,000 | SOT23 | |
| AZ23C9V1 | CJ/长电 | 25+ | 963,200,000 | SOTN/A23 | |
| AZ23C9V1 | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 26+ | 270,000 | SOTN/A23 | |
| AZ23C9V1 | CJ/长晶 | 25+ | 15,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 25+ | 452,000 | SOTN/A23 | |
| AZ23C9V1 | XN/APRYZ/芯湃半导体 | 2025+ | 300,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 21+ | 21,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 25+ | 55,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 21+ | 18,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 24+ | 21,000 | SOTN/A23 | |
| AZ23C9V1 | 江苏长电/长晶 | 2026+ | 60,000 | SOTN/A23 | |
| AZ23C9V1 | LITESEMI/厉特半导体 | 26+ | 30,000 | SOTN/A23 | |
| AZ23C9V1 | CJ/长电 | 2018 | 108,000 | SOTN/A23 | |
| AZ23C9V1 | CJ/长电 | 25+ | 588,000 | SOTN/A23 | |
| AZ23C9V1 | CJ/长电 | 22+ | 60,600 | SOTN/A23 | |
| AZ23C9V1 | 国产 | 25+ | 963,200,000 | SOTN/A23 | |
| AZ23C9V1 | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| AZ23C9V1 | YANGJIE/扬杰科技 | 26+ | 300,000 | SOTN/A23 | |
| AZ23C9V1 | MCC/美微科 | 25/26+ | 17,890 | SOTN/A23 | |
| AZ23C9V1 | TSC/台湾半导体 | 1526+ | 564,210 | SOTN/A23 | |
| AZ23C9V1 | LMSEMI/砺马 | 25+ | 89,722 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 22+ | 3,000 | N/A | |
| AZ23C9V1-7-F | DIODES/美台 | 24+21+ | 16,200 | SOT23N/A3 | |
| AZ23C9V1-7-F | DIODES/美台 | 25+ | 33,000 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 1043+ | 2,879 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 25+ | 10,000 | N/A | |
| AZ23C9V1-7-F | DIODES/美台 | 22+ | 2,427 | SOT23 | |
| AZ23C9V1-7-F | DIODES/美台 | 24+ | 1,824 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 22+ | 16,200 | SOT23N/A3 | |
| AZ23C9V1-7-F | WENETE/韦能特 | 25+ | 120,000 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 22+ | 45,000 | SOT23 | |
| AZ23C9V1-7-F | DIODES/美台 | 19+20+21+22+ | 13,916 | SOT23N/A3 | |
| AZ23C9V1-7-F | DIODES/美台 | 25+ | 1,980,000 | N/A | |
| AZ23C9V1-7-F | DIODES/美台 | 22+ | 16,200 | SOT23N/A3 | |
| AZ23C9V1-7-F | DIODES/美台 | 2025+PB | 12,000 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 1043+ | 1,879 | SOT23 | |
| AZ23C9V1-7-F | DIODES/美台 | 24+ | 21,000 | SOTN/A23 | |
| AZ23C9V1-7-F | DIODES/美台 | 12+ | 2,450 | SOT23 | |
| AZ23C9V1-7-F | DIODES/美台 | 2026+PBF | 30,000 | SOTN/A23 | |
| AZ23C9V1-7-F | MSV/萌盛微 | 26+ | 500,000 | SOT23 | |
| AZ23C9V1-7-F | DIODES/美台 | 22+ | 1,767 | SOT23 | |
| AZ23C9V1-7-F | LITESEMI/厉特半导体 | 26+ | 30,000 | SOTN/A23 |
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