Results for B32(5000+)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PI3B3244QE | Diodes Incorporated | 25+ | 6,843 | 20QSOP | |
| PI3B32160AX | PERICON | 2447 | 100,500 | TSOP | |
| PI3B3244Q | PERICOM | 23+ | 135,023 | SSOP24 | |
| PI3B3251QE-2017 | DIODES/美台 | 24+ | 500,000 | N/A | |
| PI3B3253LE2017 | Diodes | 23+ | 8,000 | N/A | |
| PI3B3251W | N/A | 24+ | 3,000 | N/A | |
| PI3B3257AQEX | PERI | 24+ | 7,850 | QSOP16 | |
| PI3B3253QE2017 | Diodes | 23+ | 8,000 | N/A | |
| PI3B3253WE+CUX | DIODES/美台 | 24+ | 500,000 | N/A | |
| PI3B3257AQE-2017 | DIODES/美台 | 23+ | 12,730 | N/A | |
| PI3B3257LEX-2017-IEC | DIODES/美台 | 25+ | 11,000 | N/A | |
| PI3B3251QEX2017 | Diodes | 23+ | 8,000 | N/A | |
| PI13B32160AX | PERICON | 25+ | 2,860 | TSOP | |
| PHB32N06LT,118 | Nexperia | ROHS+Original | 1,000,000 | 原封阻容元件 | |
| PHB32N06LT,118 | NEXPERIA/安世 | 25+ | 600,000 | SOT404 | |
| PHB32N06LTMOS(场效应管) | PHI | 23+ | 134 | TO263 | |
| PHB32N06LT低压MOS管 | VBSEMI/台湾微碧 | 23+ | 3,045 | TO263 | |
| PHB32N06LT | NEXPERIA/安世 | 2511 | 360,000 | D2PAK | |
| PHB32N06LT,118 | Nexperia(安世) | 2447 | 115,000 | SOT404 | |
| PHB32N06LT118MOS(场效应管) | NEXPERIA/安世 | 21+22+ | 48,000 | SOT404 | |
| PHB32N06T | PHI | 20+ | 32,500 | TO263 | |
| PHB32N06LT118MOS(场效应管) | NEXPERIA/安世 | 21+22+ | 48,000 | SOT404 | |
| PHB32N06LT118 | NEXPERIA | 25+ | 3,675 | TO263 | |
| PHB32N06LT | 恩XP | SOT404TO-263D2PAK | 6,000 | 22+ | |
| PHB32N06LT,118MOS(场效应管) | NEXPERIA/安世 | SOT404 | 48,000 | 23+ | |
| PHB32N06LT,118MOS(场效应管) | NEXPERIA/安世 | SOT404 | 48,000 | 23+ | |
| PHB32NQ06LT | 恩XP | 23+ | 11,846 | TO263 | |
| PHB32N06LT,118 | NEXPERIA | 2230 | 799 | con | |
| PHB32N06LT,118 | NEXPERIA/安世 | 25+ | 600,000 | SOT404 | |
| PHB32N06LT118MOS(场效应管) | NEXPERIA/安世 | 21+22+ | 48,000 | SOT404 | |
| PHB32N06LT+118 | 恩XP | 23+ | 10 | TO263 | |
| PHB32N06LT | 恩XP | 23+ | 20,094 | N/A | |
| PHB32N06LT | 恩XP | 23+ | 20,094 | N/A | |
| PHB32N06LT+118 | 恩XP | 23+ | 125,800 | TO263 | |
| PHB32N06LT118MOS(场效应管) | NEXPERIA/安世 | 21+22+ | 48,000 | SOT404 | |
| PHB32N06LT+118 | ADI | 23+ | 7,000 | TO263 | |
| PHB32N06LT,118MOS(场效应管) | NEXPERIA/安世 | SOT404 | 48,000 | 23+ | |
| PHB32N06LT118 | NEXPERIA | 25+ | 3,675 | TO263 | |
| PHB32N06T | ON/安森美 | 23+ | 69,820 | D2PAK3 | |
| PHB32N06LTMOS(场效应管) | 恩XP | 22+ | 17,267 | D2PAK | |
| PHB32N06LT,118 | Nexperia | ROHS+Original | 1,000,000 | 原封阻容元件 | |
| PHB32N06LTMOS(场效应管) | 恩XP | 22+ | 17,267 | D2PAK | |
| PHB32N06LT,118 | NEXPERIA/安世 | 25+ | 600,000 | SOT404 | |
| PHB32N06LT低压MOS管 | VBSEMI/台湾微碧 | 23+ | 3,045 | TO263 | |
| PHB32N06LT | 恩XP | 24+ | 8,548 | 标准封装 | |
| PHB32N06LT+118 | 恩XP | 23+ | 125,800 | TO263 | |
| PHB32N06LT,118MOS(场效应管) | NEXPERIA/安世 | SOT404 | 48,000 | 23+ | |
| PHB32N06LTMOS(场效应管) | PHI | 23+ | 134 | TO263 | |
| PHB32N06LT低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | TO263 | |
| PHB32N06LT118 | NEXPERIA | 25+ | 3,675 | TO263 |