Results for BAS116(1,221)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BAS116E6327 | Infineon/英飞凌 | 25+ | 25,000 | SOT23 | |
| BAS116LPH4-7B | Diodes(美台) | 2511 | 12,000 | 标准封装 | |
| BAS116E6327 | INFINEON | 25+23+ | 29,574 | Sot23 | |
| BAS116LPH4-7B | DIODES/美台 | 24+ | 6,000 | X2DFN10062 | |
| BAS116LPH4-7B | DIODES/美台 | 23+ | 50,000 | 2XFDFN | |
| BAS116E6327 | INF | 24+ | 66,000 | N/A | |
| BAS116LPH4-7B | Diodes(美台) | 23+ | 20,094 | N/A | |
| BAS116E6327 | Infineon/英飞凌 | 21+ | 6,820 | SOT23 | |
| BAS116LPH4-7B | Infineon(英飞凌) | 25+ | 5,000 | SOT3233 | |
| BAS116LPH4-7B | DISCRETE | 10000 | 100,000 | DIO | |
| BAS116LPH4-7B | DIODES INCORPORATED | 21+ | 130 | 标准封装 | |
| BAS116LPH4-7B | Diodes Zetex | 2024 | 13,012 | N/A | |
| BAS116E6327 | INFINEON-英飞凌 | 24+25+26+27+ | 36,218 | SOT233 | |
| BAS116E6327 | INFINEON-英飞凌 | 24+25+26+27+ | 143,788 | SOT23车规 | |
| BAS116LSYL | Nexperia | 25+ | 11,543 | N/A | |
| BAS116E6327 | Infineon(英飞凌) | 24+ | 9,855 | N/A | |
| BAS116LPH4-7B | DIODES/美台 | 25+ | 90,000 | 2XFDFN | |
| BAS116LT1G | ON SEMICONDUCTOR | 24+ | 10,000 | con | |
| BAS116E6327 | INFINEON | 22+ | 20,000 | SOT23 | |
| BAS116LPH4-7B | DIODES | 24+ | 5,000 | 2XFDFN | |
| BAS116E6327 | Infindeon | 26+ | 86,720 | 原厂原封装 | |
| BAS116LT1G | ON/安森美 | 25+ | 90,000 | SOT23 | |
| BAS116E6327 | Infineon(英飞凌) | 23+ | 7,000 | 标准封装 | |
| BAS116LT1G | ON | 23+ | 18,890 | SOT23 | |
| BAS116LYL | Nexperia | 25+ | 7,800 | 电联咨询 | |
| BAS116LT1G | ON/安森美 | 2026+ | 29,935 | SOT23 | |
| BAS116LT1G | 鑫远鹏 | 25+ | 5,000 | N/A | |
| BAS116LT3G | ON/安森美 | 26+ | 8,880 | SMD | |
| BAS116LT1G | ON SEMICONDUCTOR | 2023+ | 21,000 | SMD | |
| BAS116LT1G | ON | 26+ | 8,000 | SOT233 | |
| BAS116LYL | NEXPERIA/安世 | 25+ | 300,000 | SOD882 | |
| BAS116LYL | NEXPERIA | 22+ | 520,000 | SMD | |
| BAS116LT1 | ON(安森美) | 24+ | 8,000 | 标准封装 | |
| BAS116LT1 | ON(安森美) | 23+ | 20,094 | N/A | |
| BAS116LT1 | ON(安森美) | 23+ | 5,000 | 标准封装 | |
| BAS116LT1 | ON/ONSemiconductor/安森 | 24+ | 9,028 | SOT23 | |
| BAS116LT1 | ON(安森美) | 23+ | 8,000 | 标准封装 | |
| BAS116LT1 | ON(安森美) | 26+ | 10,000 | N/A | |
| BAS116LT1 | ON(安森美) | 25+ | 8,800 | 标准封装 | |
| BAS116LT1 | ON(安森美) | 26+ | 60,000 | N/A | |
| BAS116LT1 | ON SEMICONDUCTOR | 2023+ | 5,969 | SMD | |
| BAS116HYFHT116 | ROHM/罗姆 | 23+ | 5,000 | SOT23 | |
| BAS116HY | ROHM/罗姆 | 20+ | 120,000 | SOT23 | |
| BAS116E6327HTSA1 | Infineon(英飞凌) | 20212022+ | 7,000 | PGSOT23 | |
| BAS116HYFHT116 | ROHM-罗姆 | 24+25+26+27+ | 143,788 | SOT23车规 | |
| BAS116HYFHT116 | ROHM | 21+ | 3,000 | SOT23 | |
| BAS116E6327HTSA1 | Infineon(英飞凌) | 23+ | 20,094 | N/A | |
| BAS116-7-F | DIODES/美台 | 25+ | 5,000 | SOT23 | |
| BAS116HYFH | ROHM/罗姆 | 2511 | 360,000 | SOT23 | |
| BAS116HYFH | ROHM/罗姆 | 20+ | 120,000 | SOT23 |