Results for BAS11(1,224)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BAS116LPH4-7B | DIODES/美台 | 2447 | 100,500 | DFN10062 | |
| BAS116LT1G | ON/安森美 | 2409+ | 3,000 | na | |
| BAS116LT1G | ON(安森美) | 25+ | 9,000 | N/A | |
| BAS116LPH4-7B | Diodes(美台) | 25+ | 500,000 | DFN2(0.6x1) | |
| BAS116LT1G贴片三极管 | LRC/乐山 | 26+ | 43,600 | SOT23 | |
| BAS116LT1G | ON/安森美 | 23+ | 12,730 | N/A | |
| BAS116LT1G | ON | 24+ | 5,000 | SOT233 | |
| BAS116LT1G | ON | 22+ | 20,000 | SOT23 | |
| BAS116LT3G | ON/安森美 | 23+ | 7,000 | SMD | |
| BAS116LYL | Nexperia(安世) | 2447 | 115,000 | SOD882 | |
| BAS116LT1G | ON(安森美) | 25+ | 8,800 | 标准封装 | |
| BAS116LT1G | ON SEMICONDUCTOR | 2140 | 3,344 | con | |
| BAS116LT1G | ON(安森美) | 26+ | 60,000 | N/A | |
| BAS116LPH4-7B | DIODES | 最新 | 9,600 | 2XFDFN | |
| BAS116LT3G | ON | 25+ | 188,600 | SOT23SCPRPBF | |
| BAS116LT3G | ON | 25+ | 9,500 | SOT23 | |
| BAS116LT1G | ON/安森美 | 25 | 6,000 | N/A | |
| BAS116E6327 | Infineon(英飞凌) | 25+ | 11,580 | N/A | |
| BAS116E6327 | Infineon(英飞凌) | 25+ | 11,580 | N/A | |
| BAS116LT1G | ON | 24+ | 13,523 | N/A | |
| BAS116LPH4-7B | DIODES | 25+ | 6,675 | DFN2 | |
| BAS116E6327 | Infineon(英飞凌) | 25+ | 11,580 | N/A | |
| BAS116TT1G | ONSEMI | N/A | 8,560 | N/A | |
| BAS116E6327 | Infineon | 24+ | 3,348 | N/A | |
| BAS116LPH4-7B | DIODES/美台 | ROHS .original | 10,000 | DFN10062 | |
| BAS116E6327 | Infineon/英飞凌 | 25+ | 10,280 | 原厂封装 | |
| BAS116LPH4-7B | DIODES/美台 | 25+ | 12,700 | X2DFN10062 | |
| BAS116E6327 | Infineon(英飞凌) | 23+ | 19,850 | N/A | |
| BAS116LPH4-7B | DIODES | 23+ | 89,200 | DFN10062 | |
| BAS116E6327 | Infineon/英飞凌 | 25+ | 25,000 | SOT23 | |
| BAS116LPH4-7B | DIODES/美台 | 23+ | 9,990 | N/A | |
| BAS116E6327 | INFINEON | 25+23+ | 29,574 | Sot23 | |
| BAS116LPH4-7B | DIODES/美台 | 23+ | 50,000 | 2XFDFN | |
| BAS116E6327 | INF | 24+ | 66,000 | N/A | |
| BAS116LPH4-7B | Diodes(美台) | 23+ | 20,094 | N/A | |
| BAS116E6327 | Infineon/英飞凌 | 21+ | 6,820 | SOT23 | |
| BAS116E6327 | Infineon/英飞凌 | 24+ | 8,000 | SOT23 | |
| BAS116E6327 | INFINEON | 23+ | 12,800 | SOT23 | |
| BAS116LPH4-7B | DISCRETE | 10000 | 100,000 | DIO | |
| BAS116E6327 | INFINEON | 26+ | 7,936 | SOT233 | |
| BAS116E6327 | Infineon/英飞凌 | 2021+ | 9,600 | SOT23 | |
| BAS116LSYL | Nexperia | 25+ | 11,543 | N/A | |
| BAS116LT1G | ON(安森美) | 2023+ | 8,800 | N/A | |
| BAS116LSYL | N/A | 26+ | 64,000 | N/A | |
| BAS116LT1G | ON SEMICONDUCTOR | 24+ | 10,000 | con | |
| BAS116E6327 | Infineon(英飞凌) | 23+ | 7,000 | 标准封装 | |
| BAS116LPH4-7B | DIODES | 24+ | 5,000 | 2XFDFN | |
| BAS116E6327 | Infindeon | 26+ | 86,720 | 原厂原封装 | |
| BAS116E6327 | INFINEON | 24+ | 64,580 | SOT233 | |
| BAS116LPH4-7B | DIODES/美台 | 23+ | 9,000 | DFN10062 |