Results for BDFN2C121V(51)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BDFN2C121V | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| BDFN2C121V | BORN/伯恩半导体 | 23+ | 10,000 | DFNN/A2L | |
| BDFN2C121V | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2 | |
| BDFN2C121V | ZXWILL | 2022+ | 40,000 | DFN1006 | |
| BDFN2C121V | BORN/Cnnpchip/新晶微 | 26+ | 125,832 | DFN1006 | |
| BDFN2C121V | BORN/伯恩半导体 | 26+ | 1,258,900 | DFNN/A2L | |
| BDFN2C121V | WILLSEMI/韦尔 | N/A | 51,000 | DFN1006N/A2(SODN/A882) | |
| BDFN2C121V | BORN伯恩 | 22+ | 65,200 | DFN1006 | |
| BDFN2C121V | BORN/伯恩半导体 | 17+ | 22,055 | FBP2C | |
| BDFN2C121V | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C121V | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| BDFN2C121V | TLC竞沃 | 2021+ | 17,000 | FBP2C | |
| BDFN2C121V | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C121V | BORN/伯恩半导体 | 2026+ | 236,600 | DFN1006N/A2L | |
| BDFN2C121V | BORN/伯恩半导体 | 2026+ | 663,300 | DFN1006N/A2L | |
| BDFN2C121V | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006 | |
| BDFN2C121V | BORN/伯恩半导体 | 24+ | 48,000 | DFNN/A2L | |
| BDFN2C121V | BORN伯恩 | 24+ | 60,000 | 0402 | |
| BDFN2C121V | BORN/伯恩半导体 | 25+ | 199,000 | DFNN/A2L | |
| BDFN2C121V | SK/森浦科 | 24+ | 43,946 | DFNN/A2L | |
| BDFN2C121V | BORN/伯恩半导体 | 23+ | 48,000 | FBP2C | |
| BDFN2C121V | BORN/伯恩半导体 | 24+25+ | 100,000 | 0402 | |
| BDFN2C121V | MSV/萌盛微 | 26+ | 500,000 | DFN1006N/A2L | |
| BDFN2C121V | BORN/伯恩半导体 | 25+ | 1,000,000 | DFNN/A2L | |
| BDFN2C121V | 伯恩/NFSY | 2023+ | 60,000 | DFN1006N/A2L | |
| BDFN2C121V | WENETE/韦能特 | 25+ | 120,000 | DFN1006N/A2L | |
| BDFN2C121V | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C121V | LITESEMI/厉特 | 23+ | 300,905 | DFN1006 | |
| BDFN2C121V | BORN/伯恩半导体 | 25+ | 9,195 | DFN1006N/A2L | |
| BDFN2C121V35 | BORN/Cnnpchip/新晶微 | 26+ | 125,846 | DFN1006 | |
| BDFN2C121V35 | ZXWILL | 2022+ | 52,300 | DFN1006 | |
| BDFN2C121V35 | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN1006 | |
| BDFN2C121V35 | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006N/A2L | |
| BDFN2C121V35 | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| BDFN2C121V35 | BORN/伯恩半导体 | 23+ | 10,000 | N/A | |
| BDFN2C121V35 | BORN/伯恩半导体 | 24+25+ | 100,000 | 0402 | |
| BDFN2C121V35 | BORN/伯恩半导体 | 25+ | 83,121 | DFN1006N/A2L | |
| BDFN2C121V35 | BORN伯恩 | 24+ | 60,000 | 0402 | |
| BDFN2C121V35 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006 | |
| BDFN2C121V35 | BORN/伯恩半导体 | 2026+ | 663,300 | DFN1006N/A2L | |
| BDFN2C121V35 | QDON/启迪半导体 | 25+ | 372,747 | DFN1006N/A2L | |
| BDFN2C121V35 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| BDFN2C121V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C121V35 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| 7BDFN2C121V | BORN/Cnnpchip/新晶微 | 26+ | 124,465 | DFN1006N/A2L | |
| 7BDFN2C121V | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| 7BDFN2C121V | BORN/伯恩半导体 | 25+ | 83,121 | DFN1006N/A2L | |
| 7BDFN2C121V | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| 7BDFN2C121V | ZXWILL | 2022+ | 52,300 | DFN1006 | |
| 7BDFN2C121V | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006N/A2L |
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