Results for BZT52C2V0(194)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BZT52C2V0 | XN/APRYZ/芯湃半导体 | 2025+ | 300,000 | SODN/A123 | |
| BZT52C2V0 | TECLY/德立 | 26+ | 800,000 | SODN/A123 | |
| BZT52C2V0 | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A123 | |
| BZT52C2V0 | 国产 | 26+ | 1,000,000 | SODN/A123 | |
| BZT52C2V0 | CJ/长晶 | 25+ | 3,645,052 | SOD123 | |
| BZT52C2V0 | 长电/国产 | 25+ | 395,000 | SODN/A123 | |
| BZT52C2V0 | TSD/泰盛达 | 26+ | 300,000 | SODN/A123 | |
| BZT52C2V0 | JINGDAO/晶导微 | 20+ | 100,000 | SODN/A123 | |
| BZT52C2V0 | WILDGOOSE/威谷 | 2023+ | 100,000 | SOD123 | |
| BZT52C2V0 | YANGJIE/扬杰科技 | 26+ | 270,000 | SODN/A123 | |
| BZT52C2V0 | MSKSEMI/美森科 | 26+ | 66,000 | SODN/A123 | |
| BZT52C2V0 | 中性 | 2026+ | 300,000 | SODN/A123 | |
| BZT52C2V0 | SUNMATE/森美特 | 25+ | 85,382 | SODN/A123FL | |
| BZT52C2V0 | YANGJIE/扬杰科技 | 26+ | 6,000,000 | SODN/A123 | |
| BZT52C2V0 | MDM/重庆中晶微 | 24+ | 5,000,000 | SOD123 | |
| BZT52C2V0 | CJ/长电 | 23+ | 800,000 | SODN/A123 | |
| BZT52C2V0 | TWGMC/台湾迪嘉 | 26+ | 330,000 | SODN/A123 | |
| BZT52C2V0 | WENETE/韦能特 | 25+ | 120,000 | SOD123 | |
| BZT52C2V0 | DIOS/迪恩思 | 25+ | 156,000 | SODN/A123 | |
| BZT52C2V0 | CJ/中性/YD燕东 | 25+ | 130,064 | SOD123SOD323 | |
| BZT52C2V0 | LIGO SEMICONDUCTOR | 25+ | 150,000 | SODN/A123 | |
| BZT52C2V0 | JINGDAO/晶导微 | 24+ | 635,000 | SODN/A123 | |
| BZT52C2V0 | RCD/达标电子 | 25+ | 100,000 | SODN/A123 | |
| BZT52C2V0 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | SODN/A123 | |
| BZT52C2V0 | JINGDAO/晶导微 | 25+ | 300,000 | SODN/A123 | |
| BZT52C2V0 | CJ/Lastinght | N/A | 180,000 | SODN/A123 | |
| BZT52C2V0 | YANGJIE/扬杰科技 | 25+ | 452,000 | SODN/A123 | |
| BZT52C2V0 | TAYCHIPST/台芯 | 26+ | 300,000 | SODN/A123 | |
| BZT52C2V0 | SEP/威旺 | 26+ | 867,293 | SODN/A123 | |
| BZT52C2V0 | GW唯圣台湾 | 23+ | 60,500 | SODN/A123 | |
| BZT52C2V0-7 | DIODES/美台 | 20+21+ | 18,620 | N/A | |
| BZT52C2V0-7 | DIODES/美台 | N/A | 29,233 | N/A | |
| BZT52C2V0-7 | DIODES/美台 | 22+ | 45,000 | SOD123 | |
| BZT52C2V0-7 | DIODES/美台 | 21+22+ | 21,000 | N/A | |
| BZT52C2V0-7 | DIODES/美台 | N/A | 77,400 | N/A | |
| BZT52C2V0-7 | DIODES/美台 | 2235+ | 21,000 | N/A | |
| BZT52C2V0-7-F | DIODES/美台 | 19+21+22+ | 23,040 | SODN/A123 | |
| BZT52C2V0-7-F | DIODES/美台 | 26+ | 36,000 | SMD | |
| BZT52C2V0-7-F | DIODES/美台 | 25+ | 2,700,000 | N/A | |
| BZT52C2V0-7-F | DIODES/美台 | N/A | 84,000 | N/A | |
| BZT52C2V0-7-F | DIODES/美台 | 24+ | 42,000 | SODN/A123 | |
| BZT52C2V0-7-F | LITESEMI/厉特半导体 | 25+ | 30,000 | SODN/A123 | |
| BZT52C2V0-7-F | DIODES/美台 | 25+ | 99,999 | AN | |
| BZT52C2V0-7-F | DIODES/美台 | 26+ | 123,050 | SODN/A123 | |
| BZT52C2V0-7-F | DIODES/美台 | 25+PB | 99,000 | SODN/A123 | |
| BZT52C2V0-7-F | DIODES/美台 | 2025+ | 100,000 | SODN/A123 | |
| BZT52C2V0-7-F | JGN/ASEMI/台湾金锆 | 25+ | 51,000 | SODN/A123 | |
| BZT52C2V0-7-F | DIODES/美台 | + | 45,000 | N/A | |
| BZT52C2V0-7-F | DIODES/美台 | 2018 | 600,000 | SOD123 | |
| BZT52C2V0-7-F | MXT/美芯台 | 26+ | 109,900 | SOD123 |
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