Results for BZT52C3V9(442)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BZT52C3V9T-7 | DIODES/美台 | 25+ | 10,000 | N/A | |
| BZT52C3V9T-7 | DIODES/美台 | 21+ | 30,000 | S | |
| BZT52C3V9T-7 | DIODES/美台 | 26+ | 50,000 | SOD123 | |
| BZT52C3V9T-7 | DIODES/美台 | 23+ | 4,351 | SODN/A523 | |
| BZT52C3V9T-7 | DIODES/美台 | 25+ | 9,000 | SOD523 | |
| BZT52C3V9T-7 | DIODES/美台 | N/A | 5,000 | N/A | |
| BZT52C3V9T-7 | DIODES/美台 | 1950+ | 93,000 | S | |
| BZT52C3V9T-7 | DIODES/美台 | 22+ | 42,000 | DIODES | |
| BZT52C3V9T-7 | DIODES/美台 | 2 | 12,000 | N/A | |
| BZT52C3V9T-7 | DIODES/美台 | 2024+ | 9,000 | SOD523 | |
| BZT52C3V9T-7 | DIODES/美台 | 25+ | 60,000 | AN | |
| BZT52C3V9T-7 | N/A | 25+ | 5,973 | N/A | |
| BZT52C3V9T-7 | DIODES/美台 | 22+ | 33,000 | S | |
| BZT52C3V9T-7 | DIODES/美台 | 26+ | 36,000 | SMD | |
| BZT52C3V9T1G | MOT/仁懋 | 25+ | 30,000 | SOD123 | |
| BZT52C3V9T1G | 仁懋微 | 24+ | 45,000 | SODN/A123 | |
| BZT52C3V9T1G | LRC/乐山 | 26+ | 367,890 | SOD123 | |
| BZT52C3V9T1G | MOT/仁懋 | 25+ | 30,000 | SOD123 | |
| BZT52C3V9T1G | MOT/仁懋 | 26+ | 240,000 | SOD123 | |
| BZT52C3V9T1G | MOT/仁懋 | 25+ | 30,000 | SOD123 | |
| BZT52C3V9T1G | LRC/乐山 | 24+ | 360,000 | SOD123 | |
| BZT52C3V9T1G | MOT/仁懋 | 25+ | 99,999 | SOD123 | |
| BZT52C3V9T1G | ON/安森美/立昌先进 | 26+ | 30,000 | S0DN/A123 | |
| BZT52C3V9T1G | ON/安森美/立昌先进 | 26+ | 30,000 | S0DN/A123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 2021 | 366,000 | SODN/A123 | |
| BZT52C3V9T1G | MOT/仁懋电子 | 25+ | 30,000 | SOD123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 25+ | 15,000 | S0DN/A123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 22+ | 30,000 | SOD123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 25+PB | 78,000 | SODN/A123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 25+PB | 96,350 | SODN/A123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 23+ | 15,000 | S0DN/A123 | |
| BZT52C3V9T1G | LRC/乐山 | 24+ | 39,000 | SODN/A123 | |
| BZT52C3V9T1G | MOT/仁懋 | 25+ | 240,000 | SOD123 | |
| BZT52C3V9T1G | LRC/乐山 | 23+ | 360,000 | SOD123 | |
| BZT52C3V9T1G | LRC/乐山 | 21+ | 120,000 | SODN/A123 | |
| BZT52C3V9T1G | LRC/乐山 | 26+ | 360,000 | SODN/A123 | |
| BZT52C3V9T1G | HJRZ | 24+ | 89,000 | SOD123 | |
| BZT52C3V9T1G | ONSEMI/安森美 | 2026+PBF | 30,000 | SODN/A123 | |
| BZT52C3V9T1G | LRC/乐山 | 26+ | 360,000 | SODN/A123 | |
| BZT52C3V9T1G | 仁懋微 | 25 | 32,000 | SODN/A123 | |
| BZT52C3V9TQ | DIODES/美台 | 22+ | 300,000 | SOD523 | |
| BZT52C3V9TQ | DIODES/美台 | 22+ | 60,600 | SOD523 | |
| BZT52C3V9TQ | DIODES/美台 | 25+ | 12,000 | SOD523 | |
| BZT52C3V9TQ | DIODES/美台 | 25+ | 3,033 | SOD523 | |
| BZT52C3V9W | JINGDAO/晶导微 | 26+ | 72,000 | SODN/A123W | |
| BZT52C3V9W | JINGDAO/晶导微 | 25+ | 1,287,000 | SODN/A123W | |
| BZT52C3V9W | CBI/创基 | 26+ | 6,050 | SODN/A123 | |
| BZT52C3V9W | GOODWORK/固得沃克 | 25+ | 10,000 | SODN/A123 | |
| BZT52C3V9W | ST/意法 | 19+ | 896,000 | SODN/A123 | |
| BZT52C3V9W | HKZ/恒芯 | 23+ | 30,000 | SODN/A123 |
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