Results for BZX84C30(452)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BZX84C30 | FOSAN/富信 | 2025+ | 1,803,000 | SOTN/A23 | |
| BZX84C30 | MOT/仁懋 | 25+ | 240,000 | SOTN/A23 | |
| BZX84C30 | ST/意法 | 2026+ | 388,888 | SOTN/A23 | |
| BZX84C30 | CJ/中性/YD燕东 | 25+ | 888,891 | SOTN/A23 | |
| BZX84C30 | MOT/仁懋 | 26+ | 240,000 | SOTN/A23 | |
| BZX84C30 | XN/APRYZ/芯湃半导体 | 2025+ | 300,000 | SOTN/A23 | |
| BZX84C30 | ST/先科 | 25+ | 963,200,000 | SOTN/A23 | |
| BZX84C30 | FOSAN/富信 | 25+ | 1,800,000 | SOTN/A23 | |
| BZX84C30 | TAYCHIPST/台芯 | 26+ | 300,000 | SOTN/A23 | |
| BZX84C30 | EIC | 23+ | 300,000 | SOTN/A23 | |
| BZX84C30 | WILDGOOSE/威谷 | 2023+ | 990,000 | SOT23 | |
| BZX84C30 | CJ/长电 | 25+ | 588,000 | SOTN/A23 | |
| BZX84C30 | ONSEMI/安森美 | 24+ | 330,000 | 09 | |
| BZX84C30 | VISHAY/威世 | 2019+ | 385,000 | SOTN/A23 | |
| BZX84C30 | CRK/辰瑞克 | 26+ | 300,000 | SOTN/A23 | |
| BZX84C30 | MDM/重庆中晶微 | 24+ | 5,000,000 | SOT23 | |
| BZX84C30 | PXW | 2025 | 1,000,000 | SOTN/A23 | |
| BZX84C30 | CJ/长晶 | 25+ | 600,000 | SOTN/A23 | |
| BZX84C30 | FOSAM/富信 | 24+ | 1,200,000 | SOTN/A23 | |
| BZX84C30 | YANGJIE/扬杰科技 | 25+ | 452,000 | SOTN/A23 | |
| BZX84C30 | YXYBDT/一芯源 | 24+25+ | 705,000 | SOTN/A23 | |
| BZX84C30 | 长电/国产/中性 | N/A | 4,800,000 | SOTN/A23 | |
| BZX84C30 | 国产 | 25+ | 963,200,000 | SOTN/A23 | |
| BZX84C30 | YANGJIE/扬杰科技 | 26+ | 270,000 | SOTN/A23 | |
| BZX84C30 | NEXPERIA/安世 | 25+ | 1,008,000 | SOTN/A23 | |
| BZX84C30 | NATION/国民技术 | 01+ | 249,000 | 30V | |
| BZX84C30 | vishay/威世/pjh/SEP | 2022 | 385,646 | SOTN/A23 | |
| BZX84C30 | YANGJIE/扬杰科技 | 26+ | 300,000 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 2005 | 12,000 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 23+ | 9,000 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | N/A | 12,871 | N/A | |
| BZX84C30-7 | DIODES/美台 | 00+ | 2,800 | SOT23 | |
| BZX84C30-7 | DIODES/美台 | 24+ | 25,800 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 99+ | 3,000 | SOT23N/A3 | |
| BZX84C30-7 | VISHAY/威世 | N/A | 2,996 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 22+ | 45,000 | SOT23 | |
| BZX84C30-7 | DIODES/美台 | 04+ | 6,000 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 21+22+ | 13,536 | N/A | |
| BZX84C30-7 | DIODES/美台 | 2235+ | 13,536 | N/A | |
| BZX84C30-7 | DIODES/美台 | 25+ | 61,600 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 04+ | 6,000 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 20+21+ | 12,620 | N/A | |
| BZX84C30-7 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 2025+ | 30,083 | SOTN/A23 | |
| BZX84C30-7 | DIODES/美台 | 24+ | 9,000 | SOTN/A23 | |
| BZX84C30-7 | SK/森浦科 | 24+ | 37,379 | SOTN/A23 | |
| BZX84C30-7-01-F | DIODES/美台 | 1950+ | 351,000 | S | |
| BZX84C30-7-01-F | DIODES/美台 | 23+ | 288,000 | S | |
| BZX84C30-7-01-F | DIODES/美台 | 1040+ | 288,000 | S | |
| BZX84C30-7-01-F | DIODES/美台 | 22+ | 291,000 | S |
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