Results for D12V0H1U2LP(82)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D12V0H1U2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D12V0H1U2LP | ZXWILL | 2022+ | 52,300 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP | DIODES/美台 | 22+ | 300,000 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP | PLINGSEMIC/鹏领 | 23+ | 300,000 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D12V0H1U2LP | SXSEMIWD | 2026+PB | 900,000 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D12V0H1U2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D12V0H1U2LP | LITESEMI/厉特半导体 | 23+ | 999,000 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP-7B | Diodes/Cnnpchip/新晶微 | 26+ | 127,077 | DFN1006N/A2L | |
| D12V0H1U2LP-7B | DIODES/美台 | 20+21+22+ | 310,000 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 25+ | 200,000 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP-7B | DIODES/美台 | 24+ | 200,000 | DFN1006 | |
| D12V0H1U2LP-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| D12V0H1U2LP-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 128,000 | DFN1006N/A2 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 170,000 | N/A | |
| D12V0H1U2LP-7B | DIODES/美台 | 21+ | 830,000 | N/A | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 240,000 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 340,000 | N/A | |
| D12V0H1U2LP-7B | DIODES/美台 | 24+ | 100,000 | DFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 20+ | 8,300,000 | DFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 25+ | 600,000 | N/A | |
| D12V0H1U2LP-7B | DIODES/美台 | 25+ | 430,000 | X1DFNN/A2 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+20+ | 108,000 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 188,000 | DFN1006N/A2 | |
| D12V0H1U2LP-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| D12V0H1U2LP-7B | DIODES/美台 | 20+ | 8,300,000 | DFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 380,000 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | LITESEMI/厉特半导体 | 26+ | 300,000 | DFN1006N/A2 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+20+ | 108,000 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 22+ | 240,000 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 20+22+ | 1,511,208 | X1N/ADFN1006 | |
| D12V0H1U2LP-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D12V0H1U2LP-7B | DIODES/美台 | 26+ | 158,000 | DFN1006N/A2 | |
| D12V0H1U2LP-7B | DIODES/美台 | 24+ | 108,000 | X1N/ADFN1006N/A2 | |
| D12V0H1U2LP-7B | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D12V0H1U2LP-7B | DIAL/达尔 | 25 | 110,000 | DFN1006 | |
| D12V0H1U2LP1610 | DIODES/美台 | 24+ | 200,000 | DFN1610 | |
| D12V0H1U2LP1610 | DIODES/美台 | 25+ | 90,000 | DFN1610 | |
| D12V0H1U2LP1610 | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | LITESEMI/厉特 | 22+ | 30,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | ZXWILL | 2022+ | 52,300 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1610N/A | |
| D12V0H1U2LP1610 | DIODES/美台 | 24+ | 82,024 | DFN1610 | |
| D12V0H1U2LP1610 | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1610N/A | |
| D12V0H1U2LP1610 | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1608N/A | |
| D12V0H1U2LP1610 | PLINGSEMIC/鹏领 | 25+ | 300,000 | UN/ADFN1610N/A2 |
左右滑动查看更多信息