Results for D5V0L1B2LP(230)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D5V0L1B2LPS | DIODES/美台 | 22+ | 60,600 | UN/ADFN1006N/A2(SWP) | |
| D5V0L1B2LPS | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1006N/A2 (SWP) | |
| D5V0L1B2LPS | SXSEMIWD瞬芯 | 2025+PB | 900,000 | UN/ADFN1006N/A2 (SWP) | |
| D5V0L1B2LPS | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A | |
| D5V0L1B2LPS | LITESEMI/厉特半导体 | 23+ | 999,000 | UN/ADFN1006N/A2(SWP) | |
| D5V0L1B2LPS-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 99,999 | AN | |
| D5V0L1B2LPS-7B | ZXV | 25+ | 90,000 | 0402(1006Metric) | |
| D5V0L1B2LPS-7B | DIODES/美台 | 24+ | 10,000 | N/A | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 82,024 | DFN1006N/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 10,000 | X1DFN10062 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 568,500 | UN/ADFN1006N/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 2025+PB | 15,000 | DFNN/A1006 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 24+ | 87,000 | X1DFN10062 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 22+ | 90,000 | UDFN2N/APin | |
| D5V0L1B2LPS-7B | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | DFN1006N/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 90,000 | DFN1006N/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 26+ | 158,000 | DFN1006N/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 2022+ | 53,200 | UN/ADFN1006N/A2SWP | |
| D5V0L1B2LPS-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| D5V0L1B2LPS-7B | DIODES/美台 | 24+ | 200,000 | DFN1006N/A2 | |
| D5V0L1B2LPS-7B | Diodes/Cnnpchip/新晶微 | 26+ | 127,091 | DFN1006N/A2L | |
| D5V0L1B2LPS-7B | DIODES/美台 | 22+ | 45,000 | X1DFN10062 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 540,000 | X1DFNN/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 2018 | 600,000 | DFN1006 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 2026+ | 119,088 | DFN1006 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 17+ | 128,880 | DFN1006N/A2 | |
| D5V0L1B2LPS-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| D5V0L1B2LPS-7B | DIODES/美台 | 26+ | 36,000 | SMD | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 600,000 | N/A | |
| D5V0L1B2LPS-7B | DIODES/美台 | 25+ | 63,000 | UN/ADFN1006N/A2SWP | |
| D5V0L1B2LPS-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D5V0L1B2LPS-7B | DIODES/美台 | 24+ | 26,200 | UN/ADFN1006N/A2 | |
| D5V0L1B2LPS-7B | SK/森浦科 | 24+ | 45,059 | UN/ADFN1006N/A2 | |
| D5V0L1B2LPS-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D5V0L1B2LPSQ | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A | |
| D5V0L1B2LPSQ | DIODES/美台 | 22+ | 300,000 | UN/ADFN1006N/A2(SWP) | |
| D5V0L1B2LPSQ | ELECSUPER/静芯微 | N/A | 300,084 | DFN1006N/A2L | |
| D5V0L1B2LPSQ | DIODES/美台 | 22+ | 60,600 | 0402N/A | |
| D5V0L1B2LPSQ | DIODES/美台 | 25+ | 21,900 | 0402N/A | |
| D5V0L1B2LPSQ | QDON/启迪半导体 | 25+ | 371,097 | UN/ADFN1006N/A2 | |
| D5V0L1B2LPSQ | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1006N/A2(SWP) | |
| D5V0L1B2LPSQ | ELECSUPER/静芯微 | 25+ | 33,000 | DFN1006N/A2L | |
| D5V0L1B2LPSQ | MSV/萌盛微 | 26+ | 500,000 | DFN1006N/A2 | |
| D5V0L1B2LPSQ | WENETE/韦能特 | 25+ | 120,000 | DFN1006N/A2 | |
| D5V0L1B2LPSQ | TSD/泰盛达 | 26+ | 30,000 | TSOT26 | |
| D5V0L1B2LPSQ | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1006N/A2 (SWP) | |
| D5V0L1B2LPSQ | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D5V0L1B2LPSQ | SXSEMIWD瞬芯 | 2025+PB | 900,000 | UN/ADFN1006N/A2 (SWP) | |
| D5V0L1B2LPSQ | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A |
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