Results for D6V3H1U2LP(51)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D6V3H1U2LP | DIODES/美台 | 22+ | 300,000 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP | MSV/萌盛微 | 26+ | 500,000 | DFN1006N/A2 | |
| D6V3H1U2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D6V3H1U2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D6V3H1U2LP | DIODES/美台 | 18+ | 15,923 | DFN1006N/A2 | |
| D6V3H1U2LP | SXSEMIWD | 2026+PB | 900,000 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D6V3H1U2LP | DIODES/美台 | 18+ | 15,923 | DFN1006N/A2 | |
| D6V3H1U2LP | ZXWILL | 2022+ | 52,300 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP | PLINGSEMIC/鹏领 | 23+ | 300,000 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP | LITESEMI/厉特 | 23+ | 999,000 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D6V3H1U2LP-7 | DIODES/美台 | 20+ | 6,388 | DFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 2025+ | 12,000 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 20+ | 6,388 | DFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 23+ | 9,000 | X1N/ADFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 20+ | 6,388 | DFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 2041+ | 6,388 | DFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 25+ | 82,024 | DFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 25+ | 90,000 | DFN1006N/A2 | |
| D6V3H1U2LP-7 | DIODES/美台 | 24+ | 200,000 | DFN1006N/A2 | |
| D6V3H1U2LP16-7 | DIODES/美台 | F16102 | 128,859 | 24+ | |
| D6V3H1U2LP16-7 | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN1610 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 25+ | 10,000 | UDFN16102 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 21+ | 77,500 | DFN1610 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 20+ | 20,000 | UDFN1610N/A2 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 2024+ | 30,000 | UDFN1610N/A2 | |
| D6V3H1U2LP16-7 | DIODES/美台 | N/A | 80,000 | DFN1610 | |
| D6V3H1U2LP16-7 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1610 | |
| D6V3H1U2LP16-7 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | UN/ADFN1610N/A2 (Type B) | |
| D6V3H1U2LP16-7 | DIODES/美台 | 24+ | 200,000 | DFN1610 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 26+ | 158,000 | N/A | |
| D6V3H1U2LP16-7 | DIODES/美台 | 24+ | 10,000 | N/A | |
| D6V3H1U2LP16-7 | DIODES/美台 | 25+ | 10,000 | DFN1610 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 25+ | 99,999 | AN | |
| D6V3H1U2LP16-7 | SK/森浦科 | 24+ | 64,328 | DFN1610 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 2019+ | 12,000 | UN/ADFN1610N/A2(TypeB) | |
| D6V3H1U2LP16-7 | XINGHEWEI | 25+ | 300,000 | DFN1610N/A2L | |
| D6V3H1U2LP16-7 | DIODES/美台 | 2026+ | 663,300 | DFN1610N/A2L | |
| D6V3H1U2LP16-7 | DIODES/美台 | 2 | 30,000 | N/A | |
| D6V3H1U2LP16-7 | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1610N/A2 (Type B) | |
| D6V3H1U2LP16-7 | DIODES/美台 | 24+ | 21,352 | UDFN1610N/A2 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 25+ | 82,024 | DFN1610 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 20+ | 37,968 | UDFN16102 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 24+ | 40,000 | DFN1610N/A2L | |
| D6V3H1U2LP16-7 | Diodes/Cnnpchip/新晶微 | 26+ | 220,333 | DFN1610N/A2L | |
| D6V3H1U2LP16-7 | DIODES/美台 | 22+ | 45,000 | UDFN16102 | |
| D6V3H1U2LP16-7 | DIODES/美台 | 25+ | 900,000 | N/A | |
| D6V3H1U2LP16-7 | DIODES/美台 | 25+ | 90,000 | DFN1610 | |
| D6V3H1U2LP16-7 | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1610N/A2(TypeB) |
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