Results for D8V0L1B2LP(74)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D8V0L1B2LP | SXSEMI/瞬芯半导体 | 19+ | 3,342 | QFN | |
| D8V0L1B2LP | DIODES/美台 | 22+ | 300,000 | X1N/ADFN1006N/A2 | |
| D8V0L1B2LP | SXSEMIWD | 2026+PB | 900,000 | X1N/ADFN1006N/A2 | |
| D8V0L1B2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D8V0L1B2LP | Semiteh elec | 26+ | 268,589 | SODN/A882 | |
| D8V0L1B2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D8V0L1B2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D8V0L1B2LP-7B | DIODES/美台 | 2037 | 120,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 17+/23+ | 1,400,400 | N/A | |
| D8V0L1B2LP-7B | DIODES/美台 | 26+ | 35,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 21+ | 128,000 | X1N/ADFN1006N/A2 | |
| D8V0L1B2LP-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| D8V0L1B2LP-7B | DIODES/美台 | 2229 | 99,999 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 25+ | 1,200,000 | N/A | |
| D8V0L1B2LP-7B | DIODES/美台 | 26+ | 35,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 22+ | 300,000 | N/A | |
| D8V0L1B2LP-7B | DIODES/美台 | 19+20+ | 60,000 | DFN0603N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D8V0L1B2LP-7B | DIODES/美台 | 26+ | 36,000 | SMD | |
| D8V0L1B2LP-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D8V0L1B2LP-7B | DIODES/美台 | 19+20+ | 40,000 | DFN0603N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 20+21+ | 3,191,032 | X1N/ADFN1006N/A2 | |
| D8V0L1B2LP-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| D8V0L1B2LP-7B | DIODES/美台 | 20+ | 100,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 20+ | 3,375,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 20+ | 266,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 21+20+ | 108,000 | X1N/ADFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 20+ | 500,000 | NA | |
| D8V0L1B2LP-7B | DIODES/美台 | 2229 | 60,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 18+ | 44,612 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 21+20+ | 108,000 | X1N/ADFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 2115+ | 228,800 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 23+ | 1,400,000 | SMD | |
| D8V0L1B2LP-7B | DIODES/美台 | 26+ | 35,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006N/A2L | |
| D8V0L1B2LP-7B | DIODES/美台 | 20+ | 80,000 | DFN1006N/A2 | |
| D8V0L1B2LP-7B | DIODES/美台 | 17112340 | 1,400,400 | N/A | |
| D8V0L1B2LP3 | TSD/泰盛达 | 26+ | 30,000 | X3N/ADFN0603 | |
| D8V0L1B2LP3 | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN0603 | |
| D8V0L1B2LP3 | TSD/泰盛达 | 26+ | 30,000 | X3N/ADFN0603 | |
| D8V0L1B2LP3 | TSD/泰盛达 | 26+ | 30,000 | X3N/ADFN0603 | |
| D8V0L1B2LP3 | ZXWILL | 2022+ | 52,300 | X3N/ADFN0603N/A2 | |
| D8V0L1B2LP3 | DIODES/美台 | 22+ | 300,000 | X3N/ADFN0603N/A2 | |
| D8V0L1B2LP3 | SXSEMIWD | 2026+PB | 900,000 | X3N/ADFN0603N/A2 | |
| D8V0L1B2LP3-7 | DIODES/美台 | 26+ | 158,000 | X3N/ADFN0603N/A2 | |
| D8V0L1B2LP3-7 | DIODES/美台 | 25+ | 220,000 | N/A | |
| D8V0L1B2LP3-7 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN0603N/A2L | |
| D8V0L1B2LP3-7 | DIODES/美台 | 25+ | 82,024 | DFN0603N/A2 | |
| D8V0L1B2LP3-7 | DIODES/美台 | 22+ | 300,000 | DIODES | |
| D8V0L1B2LP3-7 | XINGHEWEI | 25+ | 300,000 | DFN0603N/A2L |
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