Results for DESD3V3S1BL(103)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| DESD3V3S1BL | MSV/萌盛微 | 26+ | 240,000 | DFN1006N/A2 | |
| DESD3V3S1BL | DIODES/美台 | 22+ | 300,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL | ZXWILL | 2022+ | 52,300 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL | PLINGSEMIC/鹏领 | 23+ | 300,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| DESD3V3S1BL | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| DESD3V3S1BL | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| DESD3V3S1BL | SXSEMIWD | 2026+PB | 900,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL | WENETE/韦能特 | 25+ | 120,000 | DFN1006N/A2 | |
| DESD3V3S1BL | LITESEMI/厉特 | 23+ | 1,000,000 | DFN1006N/A2 | |
| DESD3V3S1BL | LITESEMI/厉特 | 23+ | 999,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| DESD3V3S1BL | QDON/启迪半导体 | 25+ | 371,119 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7 | DIODES/美台 | 23+ | 9,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7 | DIODES/美台 | 24+ | 48,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7 | DIODES/美台 | 2022+ | 53,200 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7 | DIODES/美台 | 2025+ | 10,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7 | DIODES/美台 | 25+ | 83,121 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7 | DIODES/美台 | 26+ | 158,000 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| DESD3V3S1BL-7B | DIODES/美台 | 25+ | 1,500,000 | N/A | |
| DESD3V3S1BL-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| DESD3V3S1BL-7B | PLINGSEMIC/鹏领 | 23+ | 300,000 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | + | 290,000 | N/A | |
| DESD3V3S1BL-7B | DIODES/美台 | 25+ | 330,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7B | Semiteh elec | 26+ | 268,589 | X1N/ADFN100 | |
| DESD3V3S1BL-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | 25+ | 190,000 | NA | |
| DESD3V3S1BL-7B | DIODES/美台 | 2026+ | 119,117 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | N/A | 130,000 | N/A | |
| DESD3V3S1BL-7B | DIODES/美台 | 24+ | 650,000 | DFN1006N/A2 | |
| DESD3V3S1BL-7B | LITESEMI/厉特 | 23+ | 999,000 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | 110062 | 128,859 | 24 | |
| DESD3V3S1BL-7B | DIODES/Cnnpchip/新晶微 | 26+ | 900,000 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | 26+ | 158,000 | SODN/A882 | |
| DESD3V3S1BL-7B | DIODES/美台 | 24+ | 200,000 | DFN1006N/A2 | |
| DESD3V3S1BL-7B | TAICHANG | 26+ | 240,000 | DFN1006 | |
| DESD3V3S1BL-7B | DIODES/美台 | 2411 | 170,000 | N/A | |
| DESD3V3S1BL-7B | DIODES/美台 | 23+ | 180,000 | X1DFN10062 | |
| DESD3V3S1BL-7B | DIODES/美台 | 25+ | 121,020 | DFN1006N/A2 | |
| DESD3V3S1BL-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| DESD3V3S1BL-7B | DIODES/美台 | 25+ | 200,000 | X1DFN10062 | |
| DESD3V3S1BL-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| DESD3V3S1BL-7B | DIODES/美台 | 22+ | 110,000 | 10000 | |
| DESD3V3S1BL-7B | DIODES/美台 | 2246+ | 300,000 | DFN1006N/A2L | |
| DESD3V3S1BL-7B | DIODES/美台 | 24+ | 108,000 | X1N/ADFN1006N/A2 | |
| DESD3V3S1BL-7B | DIODES/美台 | 2 | 347,735 | 402 | |
| DESD3V3S1BL-7B | DIODES/美台 | 2018 | 1,160,000 | N/A | |
| DESD3V3S1BL-7B | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| DESD3V3S1BLP-7B | DIODES/美台 | 2014+PB | 12,500 | DFNN/A2 |
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