Results for DS26C32(197)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| DS26C32ATMX | TI/德州仪器 | 24+ | 16,200 | SOP16 | |
| DS26C32ATMX | TUDI/钍地 | 26+ | 65,740 | SOP16 | |
| DS26C32ATMX | TI/德州仪器 | 22+ | 9,000 | SMD | |
| DS26C32ATMX | NS/美国国半 | 14+ | 62,250 | SOP16 | |
| DS26C32ATMX | XM | N/A | 10,000 | N/A | |
| DS26C32ATMX | TUDI/钍地 | 26+ | 65,740 | SOP16 | |
| DS26C32ATMX | TUDI/钍地 | 26+ | 65,740 | SOP16 | |
| DS26C32ATMX | TI/德州仪器 | 25+ | 6,000 | SOPN/A16 | |
| DS26C32ATMX | NS/美国国半 | 25+ | 5,860 | SOP16 | |
| DS26C32ATMX | NS/美国国半 | 22+ | 13,000 | SOP16 | |
| DS26C32ATMX | NS/美国国半 | 24+ | 10,000 | SOP16 | |
| DS26C32ATMX | TI/德州仪器 | 25+ | 6,000 | SOPN/A16 | |
| DS26C32ATMX | NS/美国国半 | 24+ | 10,000 | SOP16 | |
| DS26C32ATMX | NS/美国国半 | 24+ | 16,338 | SOP16 | |
| DS26C32ATN | HARRIS/哈里斯 | 15+ | 3,500 | DIP16 | |
| DS26C32ATN | NS/美国国半 | New | 9,580 | Superia | |
| DS26C32ATN | NS/美国国半 | 98 | 7,636 | DIP | |
| DS26C32ATN | NS/美国国半 | 22+ | 18,850 | DIPN/A16 | |
| DS26C32ATN | HARRIS/哈里斯 | 16+ | 6,652 | DIP16 | |
| DS26C32ATN | TUDI/钍地 | 26+ | 65,740 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 24+ | 15,000 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 23+ | 50,000 | DIP | |
| DS26C32ATN | TUDI/钍地 | 26+ | 65,740 | DIP16 | |
| DS26C32ATN | NATIONALSEMICONDUCTOR | 19+ | 5,800 | N/A | |
| DS26C32ATN | NS/美国国半 | 00+ | 2,688 | DIP16 | |
| DS26C32ATN | TUDI/钍地 | 26+ | 65,740 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 22+ | 9,000 | DIP16 | |
| DS26C32ATN | HARRIS/哈里斯 | N/A | 4,159 | N/A | |
| DS26C32ATN | NS/美国国半 | 99+ | 8,373 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 06+15+ | 3,301 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 24+25+ | 3,450 | N/A | |
| DS26C32ATN | NS/美国国半 | 05+ | 5,050 | DIPN/A16 | |
| DS26C32ATN | TUDI/钍地 | 2026+ | 65,740 | DIP16 | |
| DS26C32ATN | TUDI/钍地 | 26+ | 65,740 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 26+ | 4,988 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 06+15+ | 3,108 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 2024+ | 5,700 | DIP | |
| DS26C32ATN | NS/美国国半 | 13+ | 8,900 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 25+ | 16,930 | DIPN/A16 | |
| DS26C32ATN | NS/美国国半 | 11+ | 3,599 | DIP16 | |
| DS26C32ATN | TUDI/钍地 | 26+ | 65,740 | DIP16 | |
| DS26C32ATN | NS/美国国半 | N/A | 2,800 | DIP16 | |
| DS26C32ATN | NS/美国国半 | 2022+ | 8,900 | 08 | |
| DS26C32ATN | NS/美国国半 | 22+ | 18,850 | DIPN/A16 | |
| DS26C32CMX | TUDI/钍地 | 26+ | 65,650 | SOP16 | |
| DS26C32CMX | NS/美国国半 | 2025+ | 2,675 | SOP16 | |
| DS26C32CMX | TUDI/钍地 | 26+ | 65,650 | SOP16 | |
| DS26C32CMX | TUDI/钍地 | 26+ | 65,650 | SOP16 | |
| DS26C32CMX | TUDI/钍地 | 26+ | 65,650 | SOP16 | |
| DS26C32CMX | TUDI/钍地 | 26+ | 65,650 | SOP16 |
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