Results for ESD05(2,886)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESD05V23T-2LC | UNSEMI/优恩 | 24+ | 24,000 | SOTN/A23 | |
| ESD05V23T-2LC | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-2LC | UNSEMI/优恩 | 23+ | 900,000 | SOT23 | |
| ESD05V23T-2LC | MSKSEMI/美森科 | 26+ | 66,000 | SOTN/A23 | |
| ESD05V23T-2LC | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| ESD05V23T-LA | QDON/启迪半导体 | 25+ | 369,280 | SOTN/A23 | |
| ESD05V23T-LA | UNSEMI/优恩 | 25+ | 89,500 | SOTN/A23 | |
| ESD05V23T-LA | CNNPCHIP/新晶微 | 25+ | 900,000 | SOTN/A23 | |
| ESD05V23T-LA | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-LA | SOCAY/硕凯/CNNPCHIP/新晶微 | 26+ | 452,118 | SOTN/A23 | |
| ESD05V23T-LA | CCSEMI/芯能圆 | 25+ | 99,000 | SOTN/A23 | |
| ESD05V23T-LA | SOCAY/硕凯 | 25+ | 68,500 | SOT23 | |
| ESD05V23T-LA | SXSEMIWD | 2026+PB | 900,000 | SOT23 | |
| ESD05V23T-LA | UNSEMI/Cnnpchip/新晶微 | 26+ | 125,071 | SOTN/A23 | |
| ESD05V23T-LA | N/A | N/A | 10,000 | SOTN/A23 | |
| ESD05V23T-LA | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-LA | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-LA | UNSEMI/优恩 | 24+ | 24,000 | SOTN/A23 | |
| ESD05V23T-LA | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SOTN/A23 | |
| ESD05V23T-LA | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| ESD05V23T-LA | UNSEMI/优恩 | 2026+ | 663,300 | SOTN/A23 | |
| ESD05V23T-LA | UNSEMI/优恩 | 2026+ | 236,600 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/优恩 | 25+ | 83,121 | SOTN/A23 | |
| ESD05V23T-LC | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/优恩 | 25+ | 89,500 | SOTN/A23 | |
| ESD05V23T-LC | N/A | N/A | 10,000 | SOTN/A23 | |
| ESD05V23T-LC | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/优恩 | 24+ | 15,000 | SOTN/A23 | |
| ESD05V23T-LC | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| ESD05V23T-LC | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/优恩 | 24+ | 24,000 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/优恩 | 2026+ | 236,600 | SOTN/A23 | |
| ESD05V23T-LC | QDON/启迪半导体 | 25+ | 369,281 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/优恩 | 2026+ | 663,300 | SOTN/A23 | |
| ESD05V23T-LC | UNSEMI/Cnnpchip/新晶微 | 26+ | 125,032 | SOTN/A23 | |
| ESD05V23T-LC | CNNPCHIP/新晶微 | 25+ | 900,000 | SOTN/A23 | |
| ESD05V2510-4L | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN2510 | |
| ESD05V2510-4L | SOCAY/硕凯 | 25+ | 35,904 | DFN2510 | |
| ESD05V2510-4L | SOCAY/硕凯 | 24+ | 81,000 | DFN2510 | |
| ESD05V2510-4L | SOCAY/硕凯 | 23+ | 900,000 | DFN2510 | |
| ESD05V2510-4L | SOCAY/硕凯 | 25+ | 83,121 | DFN2510 | |
| ESD05V2510-4L | SOCAY/硕凯 | 2026+PB | 900,000 | DFN2510 | |
| ESD05V2510-4L | SOCAY/硕凯 | 2022+ | 53,200 | DFN2510 | |
| ESD05V25T-4C | TSD/泰盛达 | 26+ | 30,000 | SOTN/A25 | |
| ESD05V25T-4C | SOCAY/硕凯 | 25+ | 83,121 | SOTN/A25 | |
| ESD05V25T-4C | UNSEMI/优恩 | 25+ | 89,500 | SOT23N/A5 | |
| ESD05V25T-4C | UNI/友恩 | 25+ | 86,541 | SOT23N/A5 | |
| ESD05V25T-4C | UNSEMI/Cnnpchip/新晶微 | 26+ | 120,606 | SOTN/A153 | |
| ESD05V25T-4C | UNSEMI/优恩 | 24+ | 24,000 | SOTN/A25 | |
| ESD05V25T-4C | UNSEMI/优恩 | 2022+ | 52,300 | SOT153 |
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