Results for ESD3Z12(205)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| SESD3Z12V | SINON/AIC/光宇睿芯 | 25+ | 56,000 | SODN/A323 | |
| SESD3Z12V | SINON/AIC/光宇睿芯 | 2012+ | 35,105 | SOD923 | |
| SESD3Z12V | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| SESD3Z12V | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| SESD3Z12V | SINON/AIC/光宇睿芯 | 22+ | 158,000 | SODN/A323 | |
| SESD3Z12V | SINON/AIC/光宇睿芯 | 25+ | 180,000 | SODN/A323 | |
| SESD3Z12V | WILLAS | 26+ | 86,520 | SODN/A323 | |
| SESD3Z12V | MSV/萌盛微 | 26+ | 360,000 | SOD323 | |
| SESD3Z12V | CNNPCHIP/新晶微 | 26+ | 121,577 | SODN/A323 | |
| SESD3Z12V | ELECSUPER/静芯微 | 25+ | 135,000 | SODN/A323 | |
| SESD3Z12V | LITESEMI/厉特 | 22+ | 30,000 | SOD323 | |
| SESD3Z12V | WILLAS | 25+ | 56,882 | SODN/A323 | |
| SESD3Z12V | WILLAS | 23+ | 900,000 | SOD323 | |
| SESD3Z12V | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SODN/A323 | |
| SESD3Z12V | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| SESD3Z12V | SINON/AIC/光宇睿芯 | 2026+ | 236,600 | SODN/A323 | |
| SESD3Z12V | SINON/AIC/光宇睿芯 | 13+pb | 19,500 | SOD323 | |
| SESD3Z12V | TINYSEMI/台半科技 | 24+ | 102,358 | SODN/A323 | |
| SESD3Z12V | TECHPUBLIC/台舟 | 25+ | 86,541 | SOD323 | |
| SESD3Z12VGP | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| SESD3Z12VGP | SINON/AIC/光宇睿芯 | 2026+ | 236,600 | SODN/A323 | |
| SESD3Z12VGP | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| SESD3Z12VGP | SINON/AIC/光宇睿芯 | 23+ | 6,000 | SODN/A323 | |
| SESD3Z12VGP | SINON/AIC/光宇睿芯 | 2018+ | 3,000 | SODN/A323 | |
| SESD3Z12VGP | SINON/AIC/光宇睿芯 | 2026+ | 663,300 | SODN/A323 | |
| SESD3Z12VGP | ELECSUPER/静芯微 | 25+ | 78,000 | SODN/A323 | |
| YSESD3Z12BT1G | LITESEMI/厉特 | 22+ | 30,000 | SOD323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 2025+PB | 900,000 | SOD323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 25+ | 96,533 | SODN/A323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 24+ | 57,000 | SODN/A323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 2026+ | 236,600 | SODN/A323 | |
| YSESD3Z12BT1G | CNNPCHIP/新晶微 | 26+ | 335,600 | SOD323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 2024+PB | 33,245 | SODN/A323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 25+ | 106,250 | SODN/A323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 25+ | 900,000 | SOD323 | |
| YSESD3Z12BT1G | ZXWILL | 2022+ | 52,300 | SOD323 | |
| YSESD3Z12BT1G | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| YSESD3Z12BT1G | JGN/ASEMI/台湾金锆 | 25+ | 36,000 | SODN/A323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 2026+ | 663,300 | SOD323 | |
| YSESD3Z12BT1G | Yeashin/Cnnpchip/新晶微 | 26+ | 123,876 | SODN/A323 | |
| YSESD3Z12BT1G | YEASHIN/亚昕 | 23+ | 900,000 | SOD323 | |
| YSESD3Z12BT1G | SXSEMIWD | 2026+PB | 900,000 | SOD323 | |
| YSESD3Z12BT1G | SK/森浦科 | 24+ | 33,277 | SODN/A323 | |
| YSESD3Z12T1G | YEASHIN/亚昕 | 2025+PB | 900,000 | SOD323 | |
| YSESD3Z12T1G | LITESEMI/厉特半导体 | 23+ | 999,000 | SOD323 | |
| YSESD3Z12T1G | YEASHIN/亚昕 | 12+ | 6,000 | SODN/A323 | |
| YSESD3Z12T1G | YEASHIN/亚昕 | 25+ | 96,541 | SODN/A323 | |
| YSESD3Z12T1G | SK/森浦科 | 24+ | 33,152 | SODN/A323 | |
| YSESD3Z12T1G | YEASHIN/亚昕 | 2022+ | 52,300 | SOD323 | |
| YSESD3Z12T1G | YEASHIN/亚昕 | 2025+PB | 33,245 | SODN/A323 |
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