Results for ESD8351P2T5G(60)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESD8351P2T5G | ONSEMI/安森美 | 21+22+ | 87,700 | N/A | |
| ESD8351P2T5G | ONSEMI/安森美 | 25+ | 83,121 | SOD923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 26+ | 16,854 | SOD923 | |
| ESD8351P2T5G | QDON/启迪半导体 | 25+ | 373,769 | SODN/A923 | |
| ESD8351P2T5G | ONSEMI/安森美 | N/A | 424,000 | N/A | |
| ESD8351P2T5G | ONSEMI/安森美 | 26+ | 158,000 | SODN/A923N/A2 | |
| ESD8351P2T5G | RSemich/锐斯 | 2026+ | 236,600 | SODN/A923 | |
| ESD8351P2T5G | Broadcom/AVAGO安华高 | 26+ | 100,000 | SOPN/A8 | |
| ESD8351P2T5G | ON/Cnnpchip/新晶微 | 26+ | 124,380 | SODN/A923 | |
| ESD8351P2T5G | LITESEMI/厉特 | 22+ | 30,000 | SOD923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 2026+ | 663,300 | SOD923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 2025+PB | 66,000 | SODN/A923 | |
| ESD8351P2T5G | RC | 26+ | 188,000 | SODN/A882 | |
| ESD8351P2T5G | ONSEMI/安森美 | 2026+PB | 900,000 | SOD923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 23+ | 999,000 | SOD923 | |
| ESD8351P2T5G | CNNPCHIP/新晶微 | 25+ | 900,000 | SODN/A923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 2025+PB | 15,000 | SODN/A923 | |
| ESD8351P2T5G | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SOD923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 25 | 30,000 | N/A | |
| ESD8351P2T5G | ONSEMI/安森美 | 25+ | 42,000 | SODN/A923N/A2 | |
| ESD8351P2T5G | ELECSUPER/静芯微 | 25+ | 123,000 | SOD923 | |
| ESD8351P2T5G | ONSEMI/安森美 | 23+ | 90,000 | SOD923 | |
| ESD8351P2T5G | TSD/泰盛达 | 26+ | 30,000 | SODN/A923N/A2 | |
| ESD8351P2T5G | ONSEMI/安森美 | 2022+ | 52,300 | SOD923 | |
| ESD8351P2T5G | XINGHEWEI | 25+ | 300,000 | SODN/A923 | |
| ESD8351P2T5G | TSD/泰盛达 | 26+ | 30,000 | SODN/A923N/A2 | |
| ESD8351P2T5G | ST/意法 | 22+ | 30,000 | N/A | |
| ESD8351P2T5G | TSD/泰盛达 | 26+ | 30,000 | SODN/A923N/A2 | |
| ESD8351P2T5G | ONSEMI/安森美 | 23+ | 900,000 | SOD923 | |
| ESD8351P2T5G | PLINGSEMIC/鹏领 | 25+ | 300,000 | SODN/A923 | |
| SZESD8351P2T5G | TSD/泰盛达 | 26+ | 30,000 | SODN/A923N/A2 | |
| SZESD8351P2T5G | ONSEMI/安森美 | N/A | 460,000 | N/A | |
| SZESD8351P2T5G | ONSEMI/安森美 | 25+ | 45,000 | SODN/A923N/A2 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 2022+ | 53,200 | SOD923 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 25+ | 432,000 | N/A | |
| SZESD8351P2T5G | ON/Cnnpchip/新晶微 | 26+ | 124,381 | SODN/A923 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 26+ | 60,000 | SMD | |
| SZESD8351P2T5G | ONSEMI/安森美 | 25+ | 24,000 | N/A | |
| SZESD8351P2T5G | ONSEMI/安森美 | 2026+ | 236,600 | SODN/A923 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 23+ | 30,000 | SODN/A923 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 2025+PB | 66,000 | SODN/A923 | |
| SZESD8351P2T5G | CNNPCHIP/新晶微 | 25+ | 900,000 | SODN/A923 | |
| SZESD8351P2T5G | XINGHEWEI | 25+ | 300,000 | SODN/A923 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 23+ | 33,000 | SODN/A923 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 23+24+ | 1,872,000 | N/A | |
| SZESD8351P2T5G | ONSEMI/安森美 | 25+ | 32,000 | NA | |
| SZESD8351P2T5G | TSD/泰盛达 | 26+ | 30,000 | SODN/A923N/A2 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 26+ | 158,000 | SODN/A923N/A2 | |
| SZESD8351P2T5G | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A923N/A2 | |
| SZESD8351P2T5G | ONSEMI/安森美 | 24+ | 776,000 | N/A |
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