Results for ESD8351XV2T1G(60)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESD8351XV2T1G | ONSEMI/安森美 | 25+ | 60,000 | N/A | |
| ESD8351XV2T1G | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A523N/A2 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 26+ | 58,000 | SODN/A523N/A2 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 2026+ | 663,300 | SOD523 | |
| ESD8351XV2T1G | CNNPCHIP/新晶微 | 25+ | 900,000 | SODN/A523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 25+ | 90,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 25+ | 83,121 | SOD523 | |
| ESD8351XV2T1G | RC | 26+ | 188,000 | SODN/A523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 23+ | 50,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 25+ | 60,000 | N/A | |
| ESD8351XV2T1G | ONSEMI/安森美 | 25+ | 594,000 | N/A | |
| ESD8351XV2T1G | ON/Cnnpchip/新晶微 | 26+ | 121,246 | SODN/A523 | |
| ESD8351XV2T1G | TECHPUBLIC/台舟 | 26+ | 900,000 | sod523 | |
| ESD8351XV2T1G | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 2022+ | 52,300 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 25+PB | 97,850 | SODN/A523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 18+ | 156,000 | N/A | |
| ESD8351XV2T1G | ONSEMI/安森美 | 23+ | 999,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 26+ | 158,000 | SODN/A523 | |
| ESD8351XV2T1G | TECHPUBLIC/台舟 | 26+ | 900,000 | sod523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 23+ | 66,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 2026+PB | 900,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 2025+PB | 66,000 | SODN/A523 | |
| ESD8351XV2T1G | XINGHEWEI | 25+ | 300,000 | SODN/A523 | |
| ESD8351XV2T1G | RSemich/锐斯 | 2026+ | 236,600 | SODN/A523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 24+ | 60,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 23+ | 900,000 | SOD523 | |
| ESD8351XV2T1G | ONSEMI/安森美 | 25+ | 60,000 | N/A | |
| ESD8351XV2T1G | MSKSEMI/美森科 | 26+ | 66,000 | SODN/A523 | |
| ESD8351XV2T1G | CNNPCHIP/新晶微 | 26+ | 335,600 | SOD523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 1639+ | 75,000 | SODN/A523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 25+ | 42,000 | SODN/A523N/A2 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 2020+ | 55,230 | SOD523 | |
| SZESD8351XV2T1G | ONN/欧恩 | 26+ | 236,086 | N/A | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 23+ | 33,000 | SODN/A523 | |
| SZESD8351XV2T1G | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A523N/A2 | |
| SZESD8351XV2T1G | TSD/泰盛达 | 26+ | 30,000 | SODN/A523N/A2 | |
| SZESD8351XV2T1G | TSD/泰盛达 | 26+ | 30,000 | SODN/A523N/A2 | |
| SZESD8351XV2T1G | RC | 26+ | 188,000 | SODN/A523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 16+ | 184,000 | SODN/A523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 23+ | 70,000 | SOD523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 25+ | 378,000 | N/A | |
| SZESD8351XV2T1G | ON/Cnnpchip/新晶微 | 26+ | 299,186 | SODN/A523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 21+ | 80,000 | SODN/A523N/A2 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 20+ | 60,000 | SOD523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 2026+ | 236,600 | SODN/A523 | |
| SZESD8351XV2T1G | XINGHEWEI | 25+ | 300,000 | SODN/A523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 2026+ | 663,300 | SOD523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 2025+PB | 66,000 | SODN/A523 | |
| SZESD8351XV2T1G | ONSEMI/安森美 | 26+ | 158,000 | SODN/A523N/A2 |
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