Results for ESD9N5B(106)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESD9N5B | WILLSEMI/韦尔 | 23+ | 30,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔半导体 | 24+ | 57,244 | DFN1006N/A2L | |
| ESD9N5B | DFN1006N/A2L | 22+ | 90,000 | N/A | |
| ESD9N5B | WILLSEMI/韦尔 | 2019+ | 55,230 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 25+ | 900,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 26+ | 116,152 | DFN10062L | |
| ESD9N5B | WILLSEMI/韦尔 | 23+ | 900,000 | DFN1006N/A2L | |
| ESD9N5B | QNMICRO/全能微 | 25+ | 89,500 | DFN1006N/A2L | |
| ESD9N5B | ELECSUPER/静芯微 | 25+ | 135,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 20+ | 80,673 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 19+ | 51,000 | DFN1006N/A2L | |
| ESD9N5B | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESD9N5B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESD9N5B | QDON/启迪半导体 | 25+ | 371,065 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 2012+ | 17,046 | DFN1006N/A2L | |
| ESD9N5B | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESD9N5B | JXND/嘉兴南电 | 26+ | 300,000 | DFN1006 | |
| ESD9N5B | WENETE/韦能特 | 25+ | 120,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 25+ | 46,000 | DFN1006N/A2L | |
| ESD9N5B | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| ESD9N5B | WILLSEMI/韦尔 | 23+ | 999,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 24+ | 200,000 | DFN1006N/A2L | |
| ESD9N5B | MSV/萌盛微 | 26+ | 500,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 2022+ | 40,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 25+ | 90,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 22+ | 60,600 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 25+ | 82,024 | DFN1006N/A2L | |
| ESD9N5B | Cnnpchip/新晶微/RS | 26+ | 999,000 | DFN1006N/A2L | |
| ESD9N5B | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESD9N5B | WILLSEMI/韦尔 | 2026+ROHS | 900,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 22+ | 60,600 | DFN1006N/A2L | |
| ESD9N5BL | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 25+ | 900,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 25+ | 46,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 23+ | 999,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 2022+ | 40,000 | DFN1006N/A2L | |
| ESD9N5BL | Willsemi/Cnnpchip/新晶微 | 26+ | 123,581 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 2025+PB | 900,000 | DFN1006N/A2L | |
| ESD9N5BL | LITESEMI/厉特 | 22+ | 30,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 2019+ | 55,230 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 26+ | 116,153 | DFN10062L | |
| ESD9N5BL | ELECSUPER/静芯微 | 25+ | 135,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 2026+ROHS | 900,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 2012+ | 17,047 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 23+ | 900,000 | DFN1006N/A2L | |
| ESD9N5BL | WILLSEMI/韦尔 | 19+ | 51,000 | DFN1006N/A2L | |
| ESD9N5BM | WILLSEMI/韦尔 | 2025+PB | 900,000 | DFN1006N/A2L | |
| ESD9N5BM | WILLSEMI/韦尔 | 25+ | 46,000 | DFN1006N/A2L | |
| ESD9N5BM | AKMic昂科微 | 25+ | 100,000 | DFN1006N/A2L | |
| ESD9N5BM | WILLSEMI/韦尔 | 25+ | 900,000 | DFN1006N/A2L |
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