Results for HI3512(96)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| HI3512RBC100 | HISILICON/海思 | 15+22+ | 5,048 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 24+ | 1,000 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 11+ | 399 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 25+ | 3,939 | BGA | |
| HI3512RBC100 | HISILICON/海思 | / | 500 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 1117+ | 466 | TFBGA441 | |
| HI3512RBC100 | HISILICON/海思 | 11+ | 348 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 12+ | 2,568 | TFBGA441 | |
| HI3512RBC100 | HISILICON/海思 | N/A | 265 | N/A | |
| HI3512RBC100 | HISILICON/海思 | 10+ | 50 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 22+ | 3,000 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 09+ | 108 | BGA | |
| HI3512RBC100 | HI | 23+ | 45 | BGA | |
| HI3512RBC100 | HI | N/A | 126 | BGA | |
| HI3512RBC100 | HISILICON/海思 | 1313+ | 41 | BGA | |
| HI3512RBC100 | HISILCON | 16+ | 5,000 | BGA | |
| Hi3512RBCV100 | HISLICON | 24+25+ | 4,263 | BGA | |
| Hi3512RBCV100 | HISILICON/海思 | 12+ | 3,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 26+ | 3,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 22+ | 9,500 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 15+ | 20,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 24+ | 9,500 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 11+ | 4,200 | BGA | |
| HI3512RBCV100 | SKHYNIX/海力士 | N/A | 8,500 | N/A | |
| HI3512RBCV100 | HISILICON/海思 | 25+ | 8,000 | SMD | |
| HI3512RBCV100 | HISILICON/海思 | 11+ | 53,920 | N/A | |
| HI3512RBCV100 | HISILICON/海思 | 2530 | 20,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 26+ | 4,900 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 12+ | 2,568 | TFBGA441 | |
| HI3512RBCV100 | HISILCON | 15+ | 15,900 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 1801+ | 23,000 | N/A | |
| HI3512RBCV100 | HISILICON/海思 | 26+ | 3,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思半导体 | 24+ | 3,518 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 24+ | 3,268 | BGA441 | |
| HI3512RBCV100 | HISILICON/海思 | 26+ | 3,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 19+ | 3,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 11+ | 3,500 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 20+ | 2,100 | SMD | |
| HI3512RBCV100 | HISILCON | 1835 | 85,000 | BGA | |
| HI3512RBCV100 | HISILCON | 15+ | 5,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 24+ | 50,000 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 11+ | 4,595 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 15+ | 18,971 | BGA | |
| HI3512RBCV100 | HISILICON/海思 | 23+ | 8,000 | BGAN/A441 | |
| HI3512RBCV100 | N/A | 25+ | 3,631 | N/A | |
| HI3512RBCV100 | HISILICON/海思 | 23+ | 8,525 | BGA |
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