Results for HI3520(285)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| HI3520ARFCV100 | HISILICON/海思 | 23+ | 1,698 | BGA449 | |
| HI3520ARFCV100 | HISILICON/海思 | 25+ | 8,750 | BGA | |
| Hi3520DRBCV400 | HISILICON/海思 | 21+ | 6,300 | N/A | |
| HI3520DRBCV400 | HISILICON/海思 | 18+ | 4,617 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 2,902 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 25+ | 4,031 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 2029 | 2,520 | HBGA427 | |
| HI3520DRBCV400 | HISILICON/海思 | 23+ | 2,359 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 22+ | 3,000 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 24+ | 1,526 | BGA | |
| HI3520DRBCV400 | HI | 23+ | 4,151 | QFP | |
| HI3520DRBCV400 | N/A | 25+ | 3,693 | N/A | |
| HI3520DRBCV400 | HISILICON/海思 | 24+ | 3,000 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 22+ | 2,819 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 23+ | 8,525 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 4,580 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 1,800 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 24+ | 3,689 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 23+ | 9,999 | BGA | |
| HI3520DRBCV400 | N/S | 26+ | 1,435 | N/S | |
| HI3520DRBCV400 | HISILICON/海思 | 18+ | 5,000 | QFN | |
| HI3520DRBCV400 | HISILICON/海思 | 13+ | 2,238 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 26+ | 11,943 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 3,000 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 24+ | 3,000 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 1835 | 4,860 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 20,000 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 1,500 | BGA | |
| HI3520DRBCV400 | HISILICON/海思半导体 | 21+ | 5,400 | LGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 5,040 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 22+ | 3,000 | BGA | |
| HI3520DRBCV400 | HISILICON/海思 | 20+ | 6,000 | BGA | |
| Hi3520DRQCV100 | HISILICON/海思 | 15+22+ | 5,048 | QFP | |
| Hi3520DRQCV100 | HISILICON/海思 | 24+ | 3,000 | QFP | |
| HI3520DRQCV100 | HISILICON/海思 | 22+ | 3,000 | QFP256 | |
| HI3520DRQCV100 | HISILICON/海思 | 2035+ | 85,000 | LQFP256 | |
| HI3520DRQCV100 | HISILICON/海思 | 14+ | 2,000 | LQFP256 | |
| HI3520DRQCV100 | HI | 23+ | 4,149 | QFP | |
| HI3520DRQCV100 | HI | 22+ | 2,000 | QFP | |
| HI3520DRQCV100 | HISILICON/海思 | 15+ | 1,251 | QFP256 | |
| HI3520DRQCV100 | HISILICON/海思 | 24+ | 18,793 | QFP | |
| HI3520DRQCV100 | HISILICON/海思 | 25+26+ | 2,147 | QFP256 | |
| HI3520DRQCV100 | HLI | 22+ | 4,030 | QFP256 | |
| HI3520DRQCV100 | N/A | 25+ | 3,695 | N/A | |
| HI3520DRQCV100 | HISILICON/海思 | 25+ | 2,438 | LQFP256 | |
| HI3520DRQCV100 | N/A | 25+ | 6,666 | QFP | |
| HI3520DRQCV100 | HISILICON/海思 | 25+ | 5,429 | QFP256 | |
| HI3520DRQCV100 | HISILICON/海思 | 1524+ | 19,005 | QFP | |
| HI3520DRQCV100 | HISILICON/海思半导体 | 24+ | 3,688 | QFP | |
| HI3520DRQCV100 | N/A | 23+ | 2,230 | QFP |
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