Results for HI3521(107)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| Hi3521 | HisiLicoN 海思半导体 | 19+ | 7 | BGA | |
| Hi3521 | HI | 14+15+ | 27 | BGA | |
| Hi3521 | HISILICON/海思 | 16+ | 5,000 | BGA | |
| Hi3521 | HISILICON/海思 | 2035+ | 8,500 | BGA | |
| HI3521 | HI | 10+ | 17 | BGA | |
| Hi3521ARBCV100 | HISILICON/海思 | 21+ | 20,000 | BGA437 | |
| Hi3521ARBCV100 | HISILISO | 11+ | 4,633 | BGA | |
| Hi3521ARBCV100 | HISILICON/海思 | 19+ | 10,000 | SMD | |
| Hi3521ARBCV100 | HISILICON/海思 | 24+ | 9,824 | LGA | |
| HI3521ARBCV100 | HISILICON/海思 | 20+ | 9,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 20+ | 5,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 20+ | 8,700 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 23+ | 4,898 | BGA | |
| HI3521ARBCV100 | HISILICON/海思半导体 | 25+ | 25,100 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 20+ | 4,800 | BGA | |
| HI3521ARBCV100 | HI | 21+ | 18,790 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 2022+ | 17,325 | BGA | |
| HI3521ARBCV100 | SOI/晶相 | 19+ | 3,766 | NA | |
| HI3521ARBCV100 | HISILICON/海思 | 20+ | 4,580 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 24+ | 18,790 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 24+ | 9,500 | BGA437 | |
| HI3521ARBCV100 | HISILICON/海思 | 2035+ | 4,200 | BGA437 | |
| HI3521ARBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3521ARBCV100 | HI | 21+ | 4,880 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 2020 | 26,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 20+ | 7,800 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 15+ | 15,992 | BGA | |
| HI3521ARBCV100 | HISILICON/海思半导体 | 22+ | 3,766 | NA | |
| HI3521ARBCV100 | HISILICON/海思 | 2030+ | 4,800 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 18+ | 5,000 | BGA | |
| HI3521ARBCV100 | HISILICON/海思 | 24+ | 21,000 | BGA437 | |
| HI3521ARBCV100 | HISILICON/海思 | 22+ | 9,000 | BGA | |
| HI3521AV100 | HISILICON/海思 | 19+ | 5,600 | BGA | |
| HI3521AV100 | HISILO | 17+ | 20 | ROHS | |
| HI3521AV100 | HISILICON/海思 | 20+ | 2,100 | BGA | |
| HI3521AV100 | HISILICON/海思 | 21+ | 3,200 | BGA | |
| Hi3521DRBCV100 | HISILICON/海思 | 21+ | 50,000 | TFBGAN/A437 | |
| Hi3521DRBCV100 | HISILICON/海思 | 20+ | 7,700 | NA | |
| Hi3521DRBCV100 | HISILICON/海思 | 2020 | 85,000 | BGA | |
| Hi3521DRBCV100 | HISILICON/海思 | 20+ | 3,500 | BGA437 | |
| HI3521DRBCV100 | HISILICON/海思 | 20 | 5,000 | BGA | |
| HI3521DRBCV100 | HISILICON/海思 | 24+ | 3,000 | BGA | |
| HI3521DRBCV100 | HISILICON/海思 | 2023+ | 19,630 | BGA | |
| HI3521DRBCV100 | HISILICON/海思 | 20+ | 10,300 | BGA | |
| HI3521DRBCV100 | HISILICON/海思 | 2019 | 4,000 | BGA | |
| HI3521DRBCV100 | HISILICON/海思 | 18+ | 4,619 | BGA | |
| HI3521DRBCV100 | HISILICON/海思 | 22+ | 2,837 | BGA |
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