Results for Hi3516(375)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| HI3516DRBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 2513+ | 5,623 | N/A | |
| HI3516DRBCV100 | HISILICON/海思 | 2020 | 26,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思半导体 | 25+ | 25,100 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 20+ | 6,548 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 1622+ | 19,004 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 25+ | 6,322 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 24+ | 12,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 19+ | 20,000 | BGA | |
| HI3516DRBCV100 | 我们准备要清库存，用到的联系我 | 2023+ | 19,365 | SOP/MSD | |
| HI3516DRBCV100 | HISILICON/海思 | 26+ | 12,153 | BGA395 | |
| HI3516DRBCV100 | HISILICON/海思 | 2035+ | 85,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 23+ | 5,000 | BGAN/A395 | |
| HI3516DRBCV100 | HISILICON/海思 | 25+ | 89,630 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 24+ | 9,824 | LGA | |
| HI3516DRBCV100 | HISILICON/海思 | 25+ | 5,770 | BGAN/A324 | |
| HI3516DRBCV100 | HISILICON/海思 | 20+ | 5,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 21+ | 5,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 23+ | 20,500 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 26+ | 35,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | 2018+ | 10,000 | BGA | |
| HI3516DRBCV100 | HISILICON/海思 | N/A | 10,000 | 25+ | |
| Hi3516DV100 | HISILICON/海思 | 20+ | 5,000 | BGA | |
| Hi3516DV100 | HISILICON/海思 | 23+ | 9,770 | N/A | |
| HI3516DV100 | HISILICON/海思 | 21+ | 3,000 | BGA | |
| HI3516DV100 | HISILICON/海思 | 22+ | 1 | BGA | |
| HI3516DV100 | HISILICON/海思 | 20+ | 6,548 | BGA | |
| HI3516DV100 | HISILICON/海思 | 19+ | 6 | PFBGA395 | |
| HI3516DV100 | HISILICON/海思 | 18+ | 5,000 | BGA395 | |
| HI3516DV100 | HISILICON/海思 | 23+ | 1 | BGA | |
| HI3516DV100 | HISILICON/海思 | 18+ | 1 | BGA | |
| HI3516DV100 | HISILICON/海思 | N/A | 1 | BGA | |
| HI3516DV100 | HISILICON/海思 | 20+ | 3,000 | BGA | |
| HI3516DV100 | HISILICON/海思 | 25+ | 1,000 | BGA | |
| HI3516DV100 | HISILICON/海思 | 22+ | 3,000 | BGA | |
| Hi3516ERBCV100 | HISILICON/海思 | 24+ | 78,000 | N/A | |
| HI3516ERBCV100 | HISILICON/海思 | 20+ | 3,816 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 20+ | 85,000 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 25+ | 2,685 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 24+ | 5,540 | BGA | |
| HI3516ERBCV100 | N/A | 25+ | 3,681 | N/A | |
| HI3516ERBCV100 | HISILICON/海思 | 25+ | 5,770 | BGAN/A256 | |
| HI3516ERBCV100 | HISILICON/海思 | 2019+ | 10,000 | BGA | |
| HI3516ERBCV100 | HISILICON/海思半导体 | 25+ | 25,100 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 21+ | 5,000 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 20+ | 1,600 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 22+ | 3,000 | BGA | |
| HI3516ERBCV100 | HISILICON/海思 | 18+ | 4,607 | BGA |
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