Results for IPD082N10N3(84)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| IPD082N10N3 | INFINEON/英飞凌 | 22+ | 22,800 | TON/A252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 23+ | 52,388 | TO252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 22+ | 43,000 | TO252N/A3 | |
| IPD082N10N3 | INFINEON/英飞凌 | 1535+ | 1,288 | TON/A252 | |
| IPD082N10N3 | ISC/无锡固电 | 26+ | 3,000 | DPAK/TON/A252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 22+ | 32,363 | TO252N/A3 | |
| IPD082N10N3 | HKZ/恒芯 | 23+ | 30,000 | DPAK/TON/A252 | |
| IPD082N10N3 | N/A | 22+ | 1 | NA | |
| IPD082N10N3 | INFINEON/英飞凌 | 22+ | 60,600 | TO252 | |
| IPD082N10N3 | HAMOS/汉姆 | 25+ | 30,000 | TO252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 21+ | 10,000 | TON/A252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 15+PBF | 2,800 | SOT252 | |
| IPD082N10N3 | JR | 25+ | 342,510 | TON/A252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 25+ | 42,000 | TO252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 25+ | 2,500 | TO252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 2021 | 20,000 | TON/A252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 25+ | 42,000 | TO252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 19+ | 11,100 | TO252 | |
| IPD082N10N3 | Infineon/英飞凌 | 23+ | 22,500 | TON/A252 | |
| IPD082N10N3 | INFINEON/英飞凌 | 18+ | 1,000 | TO252N/A3 | |
| IPD082N10N3G | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | TON/A252 | |
| IPD082N10N3G | 中性 | 26+ | 566,230 | TON/A252 | |
| IPD082N10N3G | SK/森浦科 | 24+ | 57,781 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 23+ | 52,388 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 22+ | 89,500 | TON/A252 | |
| IPD082N10N3G | 昕晟微 | 22 | 100,000 | TON/A252N/A2(DPAK) | |
| IPD082N10N3G | Infineon/英飞凌 | 22+ | 50,000 | TON/A252 | |
| IPD082N10N3G | UMW/广东友台半导体 | 24+ | 40,000 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 25+ | 81,788 | TON/A252 | |
| IPD082N10N3G | INFINOEN/国产 | 2024+ | 200,100 | TO252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 26+PB | 88,000 | SOTN/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 25+ | 60,000 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | N/A | 101,071 | SMD | |
| IPD082N10N3G | INFINEON/英飞凌 | 25+ | 61,600 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 19+ | 58,000 | TON/A252 | |
| IPD082N10N3G | UMW/广东友台半导体 | 25+ | 44,860 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 21+ | 100,000 | NA | |
| IPD082N10N3G | UMW/广东友台半导体 | 25+ | 1,000,000 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 24+ | 38,658 | TON/A252 | |
| IPD082N10N3G | UMW/广东友台半导体 | 25+ | 300,000 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 25+PB | 688,888 | SOTN/A252 | |
| IPD082N10N3G | LIGO SEMICONDUCTOR | 25+ | 150,000 | TON/A252 | |
| IPD082N10N3G | WENETE/韦能特 | 25+ | 50,000 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 22+ | 65,252 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 25+ | 68,500 | TO252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 24+ | 58,763 | TON/A252 | |
| IPD082N10N3G | INFINEON/英飞凌 | 24+ | 100,000 | DPAK | |
| IPD082N10N3G | INFINEON/英飞凌 | 24+ | 120,000 | N/A | |
| IPD082N10N3G | INFINEON/英飞凌 | 23+ | 724,271 | TON/A252 | |
| IPD082N10N3GATMA1 | IR/Infineon | 21+ | 9,600 | N/A |
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