Results for MBRD660CT(208)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| MBRD660CTT4G | ONSEMI/安森美 | 25+PB | 688,888 | SOTN/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+ | 375,000 | N/A | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+ | 81,788 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 2026+PBF | 69,500 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 21+ | 45,612 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 24+ | 56,743 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 22+ | 312,500 | N/A | |
| MBRD660CTT4G | XD\u0026SJ/深华天 | 2601+ | 45,000 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 22+ | 89,500 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 24+ | 225,000 | N/A | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+ | 50,000 | N/A | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+ | 699,999 | N/A | |
| MBRD660CTT4G | YDSEMI/友达 | 23+ | 42,500 | TON/A252 | |
| MBRD660CTT4G | ONN/欧恩 | 26+ | 236,086 | N/A | |
| MBRD660CTT4G | ONSEMI/安森美 | 2546+ | 83,500 | DPAK(TO252AA) | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+ | 240,000 | DPAK | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+PB | 238,000 | SOTN/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 21+ | 80,000 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 23+PB | 90,000 | TON/A252 | |
| MBRD660CTT4G | ONSEMI/安森美 | 25+ | 68,500 | TO252 | |
| MBRD660CTT4G | 台产 | 25+ | 888,891 | TON/A252(DPAK) | |
| MBRD660CTTR | VISHAY/威世 | 25+ | 68,500 | TO252 | |
| MBRD660CTTR | VISHAY/威世 | 22+ | 32,365 | DPAK | |
| MBRD660CTTR | INFINEON/英飞凌 | N/A | 4,115 | TON/A252 | |
| MBRD660CTTR | Vishay General Semiconductor N/A Diodes Di | 26+ | 320,400 | Surface Mount | |
| MBRD660CTTR | INFINEON/英飞凌 | 22+ | 10,950 | TON/A252 | |
| MBRD660CTTR | SMC/桑德斯 | 25+ | 22,500 | N/A | |
| VS-MBRD660CT-M3 | YDSEMI/友达 | 23+ | 25,010 | TON/A252 | |
| VS-MBRD660CT-M3 | Vishay General Semiconductor N/A Diodes Di | 26+ | 320,400 | TON/A252AA (DPAK) | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 26+ | 83,500 | DO213AB | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 25+ | 70,000 | TON/A252N/A3 | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 24+ | 30,000 | TON/A252 | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 23+ | 20,001 | TON/A252 | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 25+ | 68,500 | TO252 | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 23+ | 20,001 | TON/A252 | |
| VS-MBRD660CT-M3 | VISHAY/威世 | 2025+ | 82,000 | TON/A252(DN/APAK) | |
| VS-MBRD660CT-M3 | VISHAY/威世 | N/A | 3,000 | N/A | |
| VS-MBRD660CT-M3 | 台产 | 24+ | 888,891 | TON/A252(DPAK) | |
| VS-MBRD660CTPbF | VISHAY/威世 | 26+ | 83,500 | DO204 | |
| VS-MBRD660CTPBF | VISHAY/威世 | 16+ | 1,767 | TON/A252 | |
| VS-MBRD660CTPBF | VISHAY/威世 | 11+ | 3,000 | DN/APAK(TON/A252) | |
| VS-MBRD660CTPBF | VISHAY/威世 | 16+ | 28,000 | TON/A252 | |
| VS-MBRD660CTPBF | VISHAY/威世 | 11+ | 2,700 | DN/APAK(TON/A252) | |
| VS-MBRD660CTPBF | VISHAY/威世 | 23+ | 20,001 | TON/A252 | |
| VS-MBRD660CTPBF | Vishay General Semiconductor N/A Diodes Di | 26+ | 320,400 | TON/A252AA (DPAK) | |
| VS-MBRD660CTPBF | VISHAY/威世 | 11+ | 2,700 | N/A | |
| VS-MBRD660CTPBF | VISHAY/威世 | 11+ | 3,250 | DN/APAK(TON/A252) | |
| VS-MBRD660CTPBF | VISHAY/威世 | 16+ | 1,767 | TON/A252 | |
| VS-MBRD660CTPBF | VISHAY/威世 | 15+ | 4,000 | TON/A252 | |
| VS-MBRD660CTPBF | VISHAY/威世 | 22+ | 24,750 | DPAK |
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