Results for MJD31C(504)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| MJD31C | CJ/长晶 | 25+ | 60,000 | TON/A252N/A2L | |
| MJD31C | YANGJIE/扬杰科技 | 26+ | 270,000 | TON/A252 | |
| MJD31C | 中性 | 26+ | 566,230 | TON/A252 | |
| MJD31C | ONSEMI/安森美 | 25+ | 130,103 | TON/A252 | |
| MJD31C | YANGJIE/扬杰科技 | 25+ | 452,000 | TON/A252 | |
| MJD31C | 威茂微/WMW | 2025+ | 80,000 | TON/A252 | |
| MJD31C | 国产 | 2025+ | 200,000 | TON/A251 | |
| MJD31C | ST/意法/立昌 | 26+ | 360,000 | TON/A252 | |
| MJD31C | YANGJIE/扬杰科技 | 26+ | 6,000,000 | TON/A252 | |
| MJD31C | NK/南科功率 | 2026+ROHS | 1,002,520 | TON/A252 | |
| MJD31C | 江苏长电/长晶 | 2026+ | 60,000 | TON/A251 | |
| MJD31C | MCC/美微科 | 2025+ | 360,000 | DPAK | |
| MJD31C | JSCJ长晶科技CJ长电 | 21+ | 75,000 | TON/A252N/A2(DPAK) | |
| MJD31C | CJ/长电 | 25+ | 588,000 | TON/A251252 | |
| MJD31C | ONS/国产 | 2024+ | 200,100 | TO252 | |
| MJD31C | ONSEMI/安森美 | 18+ | 88,168 | TON/A251 | |
| MJD31C | NEXPERIA/安世 | 25+ | 230,300 | N/A | |
| MJD31C | ST/意法/立昌 | 26+ | 360,000 | TON/A252 | |
| MJD31C | 台产 | 25+ | 61,600 | TON/A252 | |
| MJD31C | CJ/长晶 | 25+ | 60,063 | TON/A252N/A2L | |
| MJD31C | CJ/长晶 | 2023+ | 60,000 | TON/A252N/A2L | |
| MJD31C | CJ/长电 | 26+ | 300,000 | TON/A252 | |
| MJD31C | ZH/泽华半导体 | 26+ | 100,000 | TON/A252 | |
| MJD31C | HUILIDA/汇利达 | 2516 | 142,002 | TON/A252 | |
| MJD31C | LMSEMI/砺马 | 25+ | 89,722 | TON/A252N/A2L | |
| MJD31C | CJ/长晶 | 2025+ | 360,000 | TON/A252 | |
| MJD31C | SEP/威旺 | 26+ | 866,702 | TON/A252 | |
| MJD31C | ONSEMI/安森美 | 25+ | 240,000 | DPAKN/A3 | |
| MJD31C | CJ/PJH | N/A | 363,731 | TON/A251252 | |
| MJD31C | HXY MOSFET华轩阳电子 | 25+ | 68,000 | TON/A252N/A2L | |
| MJD31C-13 | DIODES/美台 | 22+21+ | 97,160 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | 25+ | 45,000 | SODN/A123 | |
| MJD31C-13 | DIODES/美台 | 25+ | 35,000 | Trans GP BJT NPN 100 | |
| MJD31C-13 | DIODES/美台 | 23+ | 360,000 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | N/A | 67,500 | N/A | |
| MJD31C-13 | DIODES/美台 | 25+ | 92,500 | NA | |
| MJD31C-13 | DIODES/美台 | 25+ | 68,500 | TO252 | |
| MJD31C-13 | NK/南科功率 | 2026+ROHS | 1,002,520 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | 26+PB | 80,000 | TON/A252N/A251 | |
| MJD31C-13 | DIODES/美台 | 2025+ | 360,000 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | 25+ | 450,000 | N/A | |
| MJD31C-13 | DIODES/美台 | 2019+ | 30,000 | N/A | |
| MJD31C-13 | DIODES/美台 | 22+21+ | 92,800 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | 21+ | 45,612 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | 25+ | 60,600 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | P3 | 128,859 | 24+ | |
| MJD31C-13 | DIODES/美台 | 2510 | 1,605,000 | N/A | |
| MJD31C-13 | DIODES/美台 | 25+ | 802,500 | DPAK | |
| MJD31C-13 | DIODES/美台 | 22+21+ | 92,800 | TON/A252 | |
| MJD31C-13 | DIODES/美台 | + | 37,500 | N/A |
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