Results for PESDNC2FD3V3B(60)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PESDNC2FD3V3B | PRISEMI/芯导 | 2144+PBF | 705,060 | DFN1006N/A2 | |
| PESDNC2FD3V3B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 26+ | 117,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 21+ | 360,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 25+ | 287,463 | DFNN/A1006 | |
| PESDNC2FD3V3B | WENETE/韦能特 | 25+ | 120,000 | DFN1006 | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 26+ | 158,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 2026+ | 236,600 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 21+ | 100,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | TSD/泰盛达 | 26+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | N/A | 100,000 | N/A | |
| PESDNC2FD3V3B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 26+ | 218,680 | DFN1006N/A2L | |
| PESDNC2FD3V3B | Semiteh elec | 26+ | 865,794 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 2026+PB | 900,000 | DFN1006 | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 2025+ | 163,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 20+ | 198,499 | DFN1006N/A2 | |
| PESDNC2FD3V3B | SHUNTAI | 25+ | 1,800,000 | DFN1006 | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 22+ | 158,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 23+ | 999,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 25+ | 218,000 | DFN1006N/A2 | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 2026+ | 200,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 25+ | 181,630 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 25+ | 250,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 2026+ | 663,300 | DFN1006 | |
| PESDNC2FD3V3B | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 26+ | 114,755 | DFN1006 | |
| PESDNC2FD3V3B | MSV/萌盛微 | 26+ | 240,000 | DFN1006 | |
| PESDNC2FD3V3B | Prisemi/Cnnpchip/新晶微 | 26+ | 953,501 | DFN1006N/A2L | |
| PESDNC2FD3V3B | PRISEMI/芯导 | 23+ | 150,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 26+ | 158,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 26+ | 117,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 25+ | 83,121 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 2026+ | 600,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 1928+ | 103,743 | DFNN/A1006 | |
| PESDNC2FD3V3BS | TSD/泰盛达 | 26+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 2026+ | 663,300 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 2021 | 80,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 21+ | 100,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | Prisemi/Cnnpchip/新晶微 | 26+ | 953,489 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | JDT/集电通 | 25+ | 880,000 | DFN1006N/A2L(0402) | |
| PESDNC2FD3V3BS | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 25+ | 88,888 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 1928+ | 84,064 | DFNN/A1006 | |
| PESDNC2FD3V3BS | TINYSEMI/台半科技 | 25+ | 200,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | PRISEMI/芯导 | 2025+ | 163,000 | DFN1006N/A2L | |
| PESDNC2FD3V3BS | 上海芯导 | 24+ | 2,280,313 | N/A |
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