Results for PTVSHC3D12VU(60)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PTVSHC3D12VU | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 2025+ | 166,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 2026+PB | 900,000 | SODN/A323 | |
| PTVSHC3D12VU | TSD/泰盛达 | 26+ | 300,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 22+ | 158,000 | SODN/A323 | |
| PTVSHC3D12VU | UMW/广东友台半导体 | 25+ | 101,056 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/PL | 23+ | 300,000 | SODN/A323 | |
| PTVSHC3D12VU | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 26+ | 158,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 2026+ | 236,600 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 26+ | 100,000 | SODN/A323 | |
| PTVSHC3D12VU | UMW/广东友台半导体 | 25+ | 300,000 | SODN/A323 | |
| PTVSHC3D12VU | UMW/广东友台半导体 | 25+ | 1,000,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 25+ | 181,630 | SODN/A323 | |
| PTVSHC3D12VU | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 26+ | 117,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 25+ | 390,000 | N/A | |
| PTVSHC3D12VU | Prisemi/Cnnpchip/新晶微 | 26+ | 99,261 | SODN/A323 | |
| PTVSHC3D12VU | LIGO SEMICONDUCTOR | 25+ | 150,000 | SODN/A323 | |
| PTVSHC3D12VU | WENETE/韦能特 | 25+ | 120,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/PL | 25+ | 300,000 | SODN/A323 | |
| PTVSHC3D12VU | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 17+ | 133,080 | SODN/A323 | |
| PTVSHC3D12VU | MSV/萌盛微 | 26+ | 360,000 | SODN/A323 | |
| PTVSHC3D12VU | PRISEMI/芯导 | 21+ | 100,000 | SODN/A323 | |
| PTVSHC3D12VU | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| PTVSHC3D12VU | TAYCHIPST/台芯 | 26+ | 6,850,000 | SODN/A323 | |
| PTVSHC3D12VU | HIROSE/广濑 | N/A | 354,000 | N/A | |
| PTVSHC3D12VU | PRISEMI/芯导 | 20+ | 144,000 | SOD | |
| PTVSHC3D12VU | PRISEMI/芯导 | 2026+ | 663,300 | SOD323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 2019+ | 55,230 | SOD323 | |
| PTVSHC3D12VUH | HXY MOSFET华轩阳电子 | 25+ | 68,000 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/PL | 23+ | 60,000 | SODN/A323 | |
| PTVSHC3D12VUH | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 2022+ | 40,000 | SOD323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 22+ | 60,600 | SODN/A323 | |
| PTVSHC3D12VUH | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 22+ | 158,000 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 21+ | 100,000 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 25+ | 88,888 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 22+ | 297,000 | SMD | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 2025+ | 50,000 | SODN/A323 | |
| PTVSHC3D12VUH | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SODN/A323 | |
| PTVSHC3D12VUH | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 26+ | 117,000 | SODN/A323 | |
| PTVSHC3D12VUH | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| PTVSHC3D12VUH | 芯导 PRISEMI | 22+ | 298,000 | N/A | |
| PTVSHC3D12VUH | TL/腾领 | 23+ | 180,000 | SOD323 | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 22+ | 37,222 | SOD | |
| PTVSHC3D12VUH | PRISEMI/芯导 | 25+ | 390,000 | N/A |
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