Results for PTVSHC3D4V5B(106)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PTVSHC3D4V5BH | PRISEMI/芯导 | 25+ | 88,888 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2025+ | 50,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2026+ | 663,300 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2026+PB | 900,000 | SODN/A323 | |
| PTVSHC3D4V5BH | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| PTVSHC3D4V5BH | TL/腾领 | 23+ | 180,000 | SOD323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2025+ | 163,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 25+ | 120,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 20+ | 41,050 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 21+ | 100,000 | SODN/A323 | |
| PTVSHC3D4V5BH | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 | |
| PTVSHC3D4V5BH | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2401+ | 48,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2026+ | 236,600 | SODN/A323 | |
| PTVSHC3D4V5BH | MSKSEMI/美森科 | 26+ | 66,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 26+ | 158,000 | SODN/A323 | |
| PTVSHC3D4V5BH | Prisemi/Cnnpchip/新晶微 | 26+ | 99,297 | SODN/A323 | |
| PTVSHC3D4V5BH | 芯导 PRISEMI | 22+ | 49,000 | N/A | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 26+ | 92,800 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 22+ | 37,232 | SOD | |
| PTVSHC3D4V5BH | HXY MOSFET华轩阳电子 | 25+ | 68,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2022+ | 53,200 | SOD323 | |
| PTVSHC3D4V5BH | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 22+ | 60,600 | SOD323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 22+ | 158,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 23+ | 999,000 | SODN/A323 | |
| PTVSHC3D4V5BH | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 2022+ | 55,000 | N/A | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 25+ | 66,000 | SODN/A323 | |
| PTVSHC3D4V5BH | PRISEMI/芯导 | 26+ | 117,000 | SODN/A323 | |
| PTVSHC3D4V5BL | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 26+ | 158,000 | SODN/A323 | |
| PTVSHC3D4V5BL | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 2025+ | 166,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 2025+ | 50,000 | SODN/A323 | |
| PTVSHC3D4V5BL | Prisemi/Cnnpchip/新晶微 | 26+ | 99,298 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 2026+ | 663,300 | SOD323 | |
| PTVSHC3D4V5BL | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/PL | 23+ | 300,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 2026+PB | 900,000 | SOD323 | |
| PTVSHC3D4V5BL | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 26+ | 86,920 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/PL | 25+ | 300,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 21+ | 100,000 | SODN/A323 | |
| PTVSHC3D4V5BL | LMSEMI/砺马 | 25+ | 89,722 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 25+ | 88,888 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 25+ | 83,121 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 26+ | 117,000 | SODN/A323 | |
| PTVSHC3D4V5BL | PRISEMI/芯导 | 2026+ | 236,600 | SODN/A323 | |
| PTVSHC3D4V5BL | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 |
左右滑动查看更多信息