Results for RQ3E150GN(58)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| RQ3E150GN | NK/南科功率 | 2615+ROHS | 32,100 | DFN3.3X3.3 | |
| RQ3E150GN | ROHM/罗姆 | 2025+ | 3,000 | HSMT8 | |
| RQ3E150GN | ROHM/罗姆 | 26+ | 70,100 | N/A | |
| RQ3E150GN | ROHM/罗姆 | 15+ | 1,120 | DFN33 | |
| RQ3E150GN | ROHM/罗姆 | 25+ | 3,000 | DFN3.3x3.3 | |
| RQ3E150GN | ROHM/罗姆 | 2024+ | 46,080 | HSMT8 | |
| RQ3E150GN | ROHM/罗姆 | 24+ | 136,680 | HSMT8(3.3x3.3 | |
| RQ3E150GN | ROHM/罗姆 | 25+ | 46,000 | HSMT8(3.3x3.3) | |
| RQ3E150GN | ROHM/罗姆 | 14+ | 400 | DFN | |
| RQ3E150GN | SK/森浦科 | 24+ | 75,968 | HSMT8(3.3x3.3) | |
| RQ3E150GN | ROHM/罗姆 | 2512+ | 30,500 | HSMT8(3.3x3.3) | |
| RQ3E150GN | ROHM/罗姆 | 25+ | 3,000 | DFN3.3x3.3 | |
| RQ3E150GN | SK/森浦科 | 24+ | 35,400 | HSMT8(3.3x3.3) | |
| RQ3E150GN | ROHM/罗姆 | 21+ | 45,612 | DFN3X3 | |
| RQ3E150GN | ROHM/罗姆 | 2025+ | 360,000 | DFN3.3x3.3 | |
| RQ3E150GN | ROHM/罗姆 | 2014 | 3,600 | HSMT8 | |
| RQ3E150GN | ROHM/罗姆 | 2025+ | 15,000 | HSMT8 | |
| RQ3E150GN | ROHM/罗姆 | 1426+ | 2,859 | HSMT8 | |
| RQ3E150GN | NK/南科功率 | 2026+ROHS | 88,877 | HSMT8(3.3x3.3) | |
| RQ3E150GN | LITESEMI/厉特 | 20+ | 50,000 | DFN3.33.3BN/A8N/AEP | |
| RQ3E150GN | ROHM/罗姆 | 21+ | 33,288 | DFN3N/A3 | |
| RQ3E150GN | SK/森浦科 | 24+ | 368,000 | DFN3x3N/A8L | |
| RQ3E150GN | TY/台灣半導体 | 2618+ | 30,348 | DFN3N/A3N/A8L | |
| RQ3E150GN | ROHM/罗姆 | 23+ | 60,000 | HSMT8 | |
| RQ3E150GN | ROHM/罗姆 | 14+ | 73 | DFNN/A8 | |
| RQ3E150GN | ROHM/罗姆 | 22+ | 60,600 | HSMT8(3.3x3.3) | |
| RQ3E150GN | ROHM/罗姆 | 2023+ | 30,000 | HSMT8(3.3x3.3) | |
| RQ3E150GN | HAMOS/汉姆 | 25+ | 30,000 | PDFN3N/A3 | |
| RQ3E150GNTB | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | HSMT8 | |
| RQ3E150GNTB | ROHM/罗姆 | 25+ | 57,000 | Trans MOSFET NN/ACH 30 | |
| RQ3E150GNTB | ROHM/罗姆 | 23+ | 18,000 | HSMT8 | |
| RQ3E150GNTB | ROHM/罗姆 | 21+ | 12,000 | HSMT8 | |
| RQ3E150GNTB | ROHM/罗姆 | 22+23+ | 18,000 | N/A | |
| RQ3E150GNTB | ROHM/罗姆 | 23 | 96,530 | HSMT8(3.3x3.3 | |
| RQ3E150GNTB | ROHM/罗姆 | 24+ | 18,000 | N/A | |
| RQ3E150GNTB | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN3X3N/A8L | |
| RQ3E150GNTB | COVASON/昌贯 | 25+ | 56,328 | 8N/APowerVDFN | |
| RQ3E150GNTB | ROHM/罗姆 | 26+ | 22,534 | DFN3X3 | |
| RQ3E150GNTB | NK/南科功率 | 2026+ROHS | 9,420 | DFN3333 | |
| RQ3E150GNTB | ROHM/罗姆 | 21+ | 45,612 | HSMTN/A8 | |
| RQ3E150GNTB | ROHM/罗姆 | 24+ | 18,000 | N/A | |
| RQ3E150GNTB | ROHM/罗姆 | 22+ | 1,103,980 | N/A | |
| RQ3E150GNTB | ROHM/罗姆 | 23 | 36,530 | HSMT8(3.3x3.3 | |
| RQ3E150GNTB | ROHM/罗姆 | N/A | 13,404 | N/A | |
| RQ3E150GNTB | SK/森浦科 | 24+ | 45,930 | HSMTN/A8 | |
| RQ3E150GNTB | ROHM/罗姆 | 25+ | 166,526 | DFN3X3 | |
| RQ3E150GNTB | ROHM/罗姆 | 22+ | 30,000 | DIODE | |
| RQ3E150GNTB | ROHM/罗姆 | 25+ | 68,500 | DFN3X3 | |
| RQ3E150GNTB | TY/台灣半導体 | 2618+ | 60,348 | DFN3x3N/A8L | |
| RQ3E150GNTB | ROHM/罗姆 | 21+22+ | 15,000 | HSMT8 |
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