Results for SD03C(233)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| SSESD03C | SECOS/喜可士 | 2026+ | 236,600 | SODN/A923 | |
| SSESD03C | SECOS/喜可士 | 23+ | 900,000 | SOD923 | |
| SSESD03C | SECOSGMBH | 2012+ | 16,857 | SODN/A923 | |
| SSESD03C | TSD/泰盛达 | 26+ | 30,000 | SODN/A923 | |
| SSESD03C | SECOS/喜可士 | 26+ | 83,500 | SODN/A923 | |
| SSESD03C | SK/森浦科 | 24+ | 43,508 | SODN/A923 | |
| SSESD03C | SECOS/喜可士 | 23+ | 999,000 | SOD923 | |
| TESD03CB | SPSEMI/瞬雷 | 2026+ | 236,600 | DFN1006N/A2L | |
| TESD03CB | SPSEMI/瞬雷电子 | 1922+ | 48,565 | DFN1006N/A2L | |
| TESD03CB | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| TESD03CB | SPSEMI/瞬雷 | 2020+ | 1,000,000 | DFN1006N/A2 | |
| TESD03CB | QNMICRO/全能微 | 25+ | 89,500 | DFN1006N/A2 | |
| TESD03CB | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN1006 | |
| TESD03CB | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| TESD03CB | SXSEMIWD瞬芯 | 2025+PB | 900,000 | DFN1006 | |
| TESD03CB | PRISEMI/芯导 | 24+ | 241,761 | DFNN/A1006 | |
| TESD03CB | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| TESD03CB | SPSEMI/瞬雷 | 2446+ | 17,000 | DFN1006N/A2L | |
| TESD03CB | SPSEMI/瞬雷 | 26+ | 6,000 | N/A | |
| TESD03CB | SPSEMI/瞬雷 | 18+ | 150,373 | DFN1006N/A2L | |
| TESD03CB | QDON/启迪半导体 | 25+ | 365,022 | DFN1006 | |
| TESD03CB | 准确有 | 18+ | 150,433 | DFN1006N/A2L | |
| TESD03CB | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| TESD03CB | SPSEMI/瞬雷 | 18+ | 150,373 | DFN1006N/A2L | |
| TESD03CB | SPSEMI/瞬雷 | 25+ | 95,613 | DFN1006 | |
| TESD03CB | LITESEMI/厉特 | 23+ | 999,000 | DFN1006 | |
| TESD03CB | CNNPCHIP/新晶微 | 26+ | 99,007 | DFN1006N/A2L | |
| TESD03CB | MSV/萌盛微 | 26+ | 500,000 | DFN1006N/A2L | |
| TESD03CB | SPSEMI/瞬雷 | 18+ | 137,338 | DFN1006N/A2L | |
| TESD03CB | ZXWILL | 2022+ | 52,300 | DFN1006 | |
| TESD03CB | SPSEMI/瞬雷 | 2026+ | 663,300 | DFN1006N/A2L | |
| TESD03CB | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| TESD03CB | TSD/泰盛达 | 26+ | 30,000 | DFN1006 |
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