Results for SD12W(122)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| SD12W | GALAXY/银河微 | 2025+ | 30,000 | SODN/A323 | |
| SD12W | LEIDITECH/雷卯电子 | 23+ | 10,000 | N/A | |
| SD12W | WILLAS | 25+ | 83,121 | SODN/A323 | |
| SD12W | GALAXY/银河微 | 21+ | 80,000 | SODN/A123 | |
| SD12W | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| SD12W | SXSEMIWD | 2026+PB | 900,000 | SOD323 | |
| SD12W | ZXWILL | 2022+ | 52,300 | SOD323 | |
| SD12W | LITESEMI/厉特 | 23+ | 999,000 | SOD323 | |
| SD12W | WILLAS | 25+ | 56,882 | SODN/A323 | |
| SD12W | LEIDITECH/雷卯电子 | 2026+ | 663,300 | SODN/A323 | |
| SD12W | LEIDITECH/雷卯电子 | 26+ | 158,000 | SODN/A323 | |
| SD12W | 国产 | 16+ | 3,000 | SODN/A323 | |
| SD12W | LEIDITECH/雷卯电子 | 2026+ | 236,600 | SODN/A323 | |
| SD12W | GALAXY/银河微 | 26+ | 15,000 | SODN/A323 | |
| SD12W | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| SD12W | LEIDITECH/雷卯电子 | 22+ | 158,000 | SODN/A323 | |
| SD12W | PLINGSEMIC/鹏领 | 23+ | 300,000 | SOD323 | |
| ESD12W050D16R | SDISEMI | 2026+ | 663,300 | DFN1616P6 | |
| ESD12W050D16R | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1610N/A6L | |
| ESD12W050D16R | SDISEMI | 2026+ | 236,600 | DFN1616P6 | |
| ESD12W050D16R | JGN/ASEMI/台湾金锆 | 25+ | 83,121 | DFN1616P6 | |
| ESD12W050D16R | Sdisemi | 2026+ | 120,315 | DFN1616P6 | |
| ESD12W050D16R | CNNPCHIP/新晶微 | 26+ | 220,333 | DFN1610N/A6L | |
| ESD12W050DP3R | CNNPCHIP/新晶微 | 26+ | 123,720 | DFN1006N/A3L | |
| ESD12W050DP3R | SDISEMI | 2026+ | 236,600 | DFN1006P3 | |
| ESD12W050DP3R | XINGHEWEI | 25+ | 300,000 | DFN1006P3 | |
| ESD12W050DP3R | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESD12W050DP3R | SDISEMI | 2026+ | 663,300 | DFN1006P3 | |
| ESD12W050DP3R | JGN/ASEMI/台湾金锆 | 25+ | 83,121 | DFN1006P3 | |
| ESD12W050DP3R | Sdisemi | 2026+ | 120,311 | DFN1006P3 | |
| ESD12W050DP3R | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006P3 | |
| ESD12W200D5R | JGN/ASEMI/台湾金锆 | 25+ | 83,121 | SODN/A523 | |
| ESD12W200D5R | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SODN/A523 | |
| ESD12W200D5R | SDISEMI | 2026+ | 236,600 | SODN/A523 | |
| ESD12W200D5R | Sdisemi | 2026+ | 120,332 | SOD523 | |
| ESD12W200D5R | XINGHEWEI | 25+ | 300,000 | SODN/A523 | |
| ESD12W200D5R | CNNPCHIP/新晶微 | 25+ | 900,000 | SODN/A523 | |
| ESD12W200D5R | SDISEMI | 2026+ | 663,300 | SOD523 | |
| ESD12W200D5R | CNNPCHIP/新晶微 | 26+ | 169,300 | SODN/A523 | |
| ESD12W300T2L1R | SDISEMI | 2026+ | 236,600 | SOTN/A23 | |
| ESD12W300T2L1R | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SOTN/A23 | |
| ESD12W300T2L1R | JGN/ASEMI/台湾金锆 | 25+ | 83,121 | SOTN/A23 | |
| ESD12W300T2L1R | CNNPCHIP/新晶微 | 25+ | 900,000 | SOTN/A23 | |
| ESD12W300T2L1R | CNNPCHIP/新晶微 | 26+ | 120,842 | SOTN/A23 | |
| ESD12W300T2L1R | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| ESD12W300T2L1R | SDISEMI | 2022+ | 53,200 | SOTN/A23 | |
| ESD12W300T2L1R | SDISEMI | 2026+ | 663,300 | SOTN/A23 | |
| ESD12W300T2L1R | Sdisemi | 2026+ | 120,434 | SOTN/A23 | |
| ESD12W350D3CAR | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| ESD12W350D3CAR | Sdisemi | 2026+ | 120,346 | SOD323 |
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