Results for SI3434(108)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| SI3434 | SK/森浦科 | 24+ | 70,678 | SOTN/A23 | |
| SI3434 | MN/ACC | 25+ | 3,033 | SOTN/A23 | |
| SI3434 | MCC/美微科 | 2025+ | 360,000 | SOTN/A23 | |
| SI3434 | MCC/美微科 | 23+ | 30,300 | SOTN/A23 | |
| SI3434 | HAMOS/汉姆 | 25+ | 30,000 | SOT23 | |
| SI3434 | NK/南科功率 | 2026+ROHS | 88,877 | SOTN/A23 | |
| SI3434 | MCC/美微科 | 22+ | 30,000 | SOTN/A23 | |
| SI3434 | MCC/美微科 | 2025+ | 360,000 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 25+ | 125,800 | SOTN/A23 | |
| SI3434-TP | MXT/美芯台 | 26+ | 109,900 | SOT23 | |
| SI3434-TP | MCC/美微科 | 25+ | 60,000 | SOTN/A23 | |
| SI3434-TP | ZXV | 25+ | 90,000 | SOTN/A23 | |
| SI3434-TP | CQSIKIN/呈擎 | 26+ | 168,888 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 25+ | 158,000 | SOT23 | |
| SI3434-TP | JGN/ASEMI/台湾金锆 | 25+ | 100,000 | SOTN/A23 | |
| SI3434-TP | COVASON/昌贯 | 25+ | 56,328 | SOTN/A23 | |
| SI3434-TP | TY/台灣半導体 | 2618+ | 30,348 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 25+ | 267,800 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 26+ | 544,110 | SOTN/A23 | |
| SI3434-TP | NK/南科功率 | 2026+ROHS | 1,000 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 23+ | 30,300 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 2022+ | 53,200 | SOTN/A23 | |
| SI3434-TP | CQSIKIN/呈擎 | 2025+RoHS | 161,688 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 23+ | 66,000 | SOTN/A23 | |
| SI3434-TP | SK/森浦科 | 24+ | 55,819 | SOT23N/A3 | |
| SI3434-TP | MCC/美微科 | 26+ | 168,000 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 2025+PB | 15,000 | SOTN/A23 | |
| SI3434-TP | COVASON/昌贯 | 25+ | 56,328 | SOTN/A23 | |
| SI3434-TP | MCC/美微科 | 2021 | 30,000 | SOTN/A23 | |
| SI3434-TP | COVASON/昌贯 | 25+ | 26,768 | SOTN/A23 | |
| SI3434-TP | TY/台灣半導体 | 2618+ | 60,348 | SOTN/A23 | |
| SI3434-TP | MN/ACC | 25+ | 3,200 | SOTN/A23 | |
| SI3434DV | SILCONIX | 2005 | 300 | SOT23N/A6 | |
| SI3434DV | VISHAY/威世 | 10+ | 25 | SOT23N/A6 | |
| SI3434DV | VISHAY/威世 | 24+ | 45,800 | N/A | |
| SI3434DV | VISHAY/威世 | 2008 | 100 | SOTN/A163 | |
| SI3434DV | HAMOS/汉姆 | 25+ | 30,000 | SOT163 | |
| SI3434DV-T1 | SILICONIX/硅尼克斯 | 21+22+ | 1,226 | N/A | |
| SI3434DV-T1 | VISHAY/威世 | 26+ | 36,000 | SMD | |
| SI3434DV-T1 | SILICONIX/硅尼克斯 | 2235+ | 1,226 | N/A | |
| SI3434DV-T1 | VISHAY/威世 | 0318+ | 2,821 | 3K/REEL | |
| SI3434DV-T1 | VISHAY/威世 | 04+ | 311 | SOT23N/A6 | |
| SI3434DV-T1 | SILICONIX/硅尼克斯 | 20+21+ | 1,346 | N/A | |
| SI3434DV-T1 | SILICONIX/硅尼克斯 | 22+23+ | 1,339 | N/A | |
| SI3434DV-T1 | VISHAY/威世 | 03+ | 1,080 | SOTN/A163 | |
| SI3434DV-T1 | SILICONIX/硅尼克斯 | 22+23+ | 1,226 | N/A | |
| SI3434DV-T1 | VISHAY/威世 | N/A | 3,000 | N/A | |
| SI3434DV-T1 | VISHAY/威世 | 517 | 2,000 | N/A | |
| SI3434DV-T1-E3 | VISHAY/威世 | 25+ | 121,633 | SOT23N/A6 | |
| SI3434DV-T1-E3 | VISHAY/威世 | 2011+ | 123,800 | SOT23N/A6 |
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