Results for WST02N10(60)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| WST02N10 | WINSOK/立昌先进 | 26+ | 360,000 | SOTN/A23 | |
| WST02N10 | WINSOK/微硕 | 2025+ | 126,688 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 25+ | 119,950 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 25+ | 158,000 | SOT23 | |
| WST02N10 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | SOTN/A23N/A3 | |
| WST02N10 | TY/台灣半導体 | 2618+ | 60,348 | SOTN/A23 | |
| WST02N10 | WINSOK/微硕 | 2025+ | 360,000 | SOTN/A23N/A3L | |
| WST02N10 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 22+ | 60,600 | SOTN/A23N/A3 | |
| WST02N10 | 子明微科技 | 2601 | 100,000 | SOTN/A23L | |
| WST02N10 | NK/南科功率 | 2026+ROHS | 889,420 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 26+ | 95,000 | SOTN/A23N/A3L | |
| WST02N10 | CQSIKIN/呈擎 | 2025+RoHS | 161,688 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 2025+ | 122,556 | SOT23N/A3 | |
| WST02N10 | WINSOK/微硕 | 25+ | 88,888 | SOTN/A23 | |
| WST02N10 | WINSOK/微硕 | 2025+ | 152,235 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 25+ | 918,630 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 25+ | 99,000 | SOTN/A23N/A3L | |
| WST02N10 | CQSIKIN/呈擎 | 26+ | 168,888 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/微硕 | 25+ | 68,500 | SOT23 | |
| WST02N10 | WINSOK/微硕 | 25+ | 90,000 | SOTN/A23 | |
| WST02N10 | 昕晟微 | 22 | 100,000 | SOTN/A23N/A3 | |
| WST02N10 | WINSOK/微硕 | 26+ | 332,520 | SOTN/A23N | |
| WST02N10 | 裕城半导体 | 2601 | 100,000 | SOTN/A23L | |
| WST02N10 | MAKOSEMI/美科 | N/A | 300,000 | SOTN/A23N/A3 | |
| WST02N10 | WINSOK/微硕 | 26+ | 300,000 | SOTN/A23N/A3L | |
| WST02N10 | WINSOK/立昌先进 | 26+ | 360,000 | SOTN/A23 | |
| WST02N10 | WINSOK/微硕 | 25+ | 267,800 | SOTN/A23 | |
| WST02N10 | WINSOK/微硕 | 2025+ | 122,556 | SOT23N/A3 | |
| WST02N10 | WINSOK/微硕 | 23+ | 200,000 | SOTN/A23N/A3L | |
| WST02N10B | WINSOK/微硕 | 2025+ | 126,688 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 25+ | 92,890 | SOTN/A23N | |
| WST02N10B | 子明微科技 | 2601 | 100,000 | SOTN/A23L | |
| WST02N10B | WINSOK/微硕 | 25+ | 918,630 | SOTN/A23N | |
| WST02N10B | CQSIKIN/呈擎 | 2025+RoHS | 161,688 | SOTN/A23L | |
| WST02N10B | NK/南科功率 | 2026+ROHS | 88,877 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 25+ | 96,000 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 25+ | 42,000 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 25+ | 42,000 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 2025+ | 122,556 | SOTN/A23 | |
| WST02N10B | WINSOK/微硕 | 24+ | 48,000 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 26+ | 332,520 | SOTN/A23N | |
| WST02N10B | NK/南科功率 | 2026+ROHS | 889,420 | SOTN/A23L | |
| WST02N10B | WINSOK/微硕 | 23+ | 200,000 | SOTN/A23N | |
| WST02N10B | TY/台灣半導体 | 2618+ | 60,348 | SOTN/A23 | |
| WST02N10B | WINSOK/微硕 | 25+ | 88,888 | SOTN/A23 | |
| WST02N10B | 昕晟微 | 22 | 100,000 | SOTN/A23N | |
| WST02N10B | WINSOK/微硕 | 25+ | 267,800 | SOTN/A23 | |
| WST02N10B | WINSOK/微硕 | 2025+ | 360,000 | SOTN/A23L | |
| WST02N10B | SXSEMIWD瞬芯 | 2025+PB | 900,000 | SOTN/A23N |
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