Results for ZXMN4A06G(99)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ZXMN4A06GFETIGBTIC | DIODES/美台 | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA | DIODES | N/A | 50,000 | SOT223 | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GMOSFET或IGBT开关IC | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06G | DIODES/美台 | 25+ | 90,000 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA | DIODES/美台 | 2450+ | 8,850 | SOT223 | |
| ZXMN4A06GQTA | DIODES/美台 | 2450+ | 6,540 | SOT2233 | |
| ZXMN4A06G | DIODES-美台 | 24+ | 83,500 | SOT223 | |
| ZXMN4A06GQ | DIODES-美台 | 24+ | 83,500 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 500 | SOT223 | |
| ZXMN4A06GTAMOSFET或IGBT开关IC | ZETEX | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GMOSFET或IGBT开关IC | DIODES/美台 | 23+ | 13,881 | SOT223 | |
| ZXMN4A06GQ-13 | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZXMN4A06GQ-7 | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 24+ | 9,600 | SOT223 | |
| ZXMN4A06GQTA | DIODES/美台 | 20+ | 32,500 | SOT223 | |
| ZXMN4A06GT | VBsemi(台湾微碧) | 2447 | 105,000 | SOT223 | |
| ZXMN4A06G | DIODES/美台 | 2022+ | 13,881 | SOT223 | |
| ZXMN4A06GQ | DIODES/美台 | 2022+ | 13,561 | SOT223 | |
| ZXMN4A06GQTA | DIODES/美台 | 24+ | 500,000 | N/A | |
| ZXMN4A06GTA | DIODES/美台 | 24+ | 500,000 | N/A | |
| ZXMN4A06GQ | DIODES/美台 | 25+ | 90,000 | SOT223 | |
| ZXMN4A06G | DIODES/美台 | 20+ | 300,000 | SOT223 | |
| ZXMN4A06GT | DIODES/美台 | 24+ | 200,000 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 2019+ | 78,550 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GT | DIODES/美台 | 24+ | 200,000 | SOT223 | |
| ZXMN4A06GQ | DIODES-美台 | 24+ | 83,500 | SOT223 | |
| ZXMN4A06GQ-13 | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZXMN4A06GQ-7 | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZXMN4A06GTA | DIODES | 19+ | 10,785 | SOT223 | |
| ZXMN4A06GQ | DIODES-美台 | 24+ | 83,500 | SOT223 | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GQTA | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZXMN4A06GT | VBSEMI-微碧 | 24+ | 143,788 | 车规场效应管 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GTA | Diodes(美台) | 2511 | 12,000 | 标准封装 | |
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA-VB | N/A | 26+ | 48,000 | N/A | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GQTA | DIODES(美台) | 25+ | 6,843 | SOT2233 | |
| ZXMN4A06GMOSFET或IGBT开关IC | DIODES/美台 | 23+ | 13,881 | SOT223 | |
| ZXMN4A06GQ | DIODES/美台 | 23+ | 13,561 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 500 | SOT223 | |
| ZXMN4A06GTAMOSFET或IGBT开关IC | ZETEX | 23+ | 50,000 | SOT223 |