Results for ZXMN4A06GTA(54)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA | DIODES | N/A | 50,000 | SOT223 | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 24+ | 500,000 | N/A | |
| ZXMN4A06GTAMOSFET或IGBT开关IC | ZETEX | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA | DIODES/美台 | 2450+ | 8,850 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 500 | SOT223 | |
| ZXMN4A06GTAMOSFET或IGBT开关IC | ZETEX | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 24+ | 9,600 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 2019+ | 78,550 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA | DIODES | 19+ | 10,785 | SOT223 | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GTA | Diodes(美台) | 2511 | 12,000 | 标准封装 | |
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA-VB | N/A | 26+ | 48,000 | N/A | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 500 | SOT223 | |
| ZXMN4A06GTAMOSFET或IGBT开关IC | ZETEX | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 25+ | 14,889 | SOT223 | |
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA-VB | N/A | 26+ | 48,000 | N/A | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 26+ | 43,600 | SOT223 | |
| ZXMN4A06GTA | ZETEX | 25+ | 11,000 | N/A | |
| ZXMN4A06GTA | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES | 22+ | 5,000 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,314 | SOT223 | |
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA-VB | N/A | 26+ | 48,000 | N/A | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 500 | SOT223 | |
| ZXMN4A06GTAMOSFET或IGBT开关IC | ZETEX | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 25+ | 4,692 | SOT223 | |
| ZXMN4A06GTAMOS(场效应管) | DIODES/美台 | 23+ | 500 | SOT223 | |
| ZXMN4A06GTAFETIGBTIC | ZETEX | 23+ | 11,200 | SOT223 | |
| ZXMN4A06GTA | DIODES/美台 | 2019+ | 78,550 | SOT223 | |
| ZXMN4A06GTA,BD3573YHFP-M,VDZT2R5.6B | SOT223 | 23+ | 15,659 | N/A | |
| ZXMN4A06GTA | DIODES/美台 | 23+ | 12,730 | SOT2234 | |
| ZXMN4A06GTA | DIODES/美台 | 25+ | 880,000 | SMD |