Results for bas31(298)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| bas31 | N/A | 20+ | 90,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 25+ | 88,888 | SOTN/A23 | |
| BAS31 | LIGO SEMICONDUCTOR | 25+ | 150,000 | SOTN/A23 | |
| BAS31 | NK/南科功率 | 2026+ROHS | 201,314 | SOTN/A23N/A3 | |
| BAS31 | ONSEMI/安森美 | 25+ | 378,000 | N/A | |
| BAS31 | NXP/恩智浦 | 24+ | 100,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 22+ | 250,000 | SOTN/A23 | |
| BAS31 | NXP/恩智浦 | 26+26+26+ | 100,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 25+ | 300,000 | SOTN/A23 | |
| BAS31 | FAIRCHILD/仙童 | 23 | 96,530 | SOTN/A23 | |
| BAS31 | NXP/恩智浦 | 26+26+26+ | 100,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 2025+ | 122,556 | SOTN/A23 | |
| BAS31 | KDWFABRICATE/凯达微 | 23+ | 182,430 | SOTN/A23 | |
| BAS31 | FAIRCHILD/仙童 | 23+ | 258,000 | SOTN/A23N/A3 | |
| BAS31 | NXP/恩智浦 | 26+26+26+ | 100,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 25+ | 120,050 | SOTN/A23 | |
| BAS31 | NEXPERIA/安世 | 26+ | 123,050 | SOTN/A23 | |
| BAS31 | RC | 26+ | 188,000 | SOTN/A23 | |
| BAS31 | ONN/欧恩 | 26+ | 236,086 | N/A | |
| BAS31 | NXP/恩智浦 | 24+ | 810,000 | SOTN/A23 | |
| BAS31 | FAIRCHILD/仙童 | 25+ | 198,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 23+ | 360,000 | SOTN/A23 | |
| BAS31 | NEXPERIA/安世 | 2025+ | 360,000 | SOTN/A23 | |
| BAS31 | NXP/恩智浦 | 25+ | 300,000 | SOT23 | |
| BAS31 | NEXPERIA/安世 | 26+ | 96,580 | SOTN/A23 | |
| BAS31 | WENETE/韦能特 | 25+ | 120,000 | SOTN/A23 | |
| BAS31 | KDWFABRICATE | 23+ | 182,430 | SOTN/A23 | |
| BAS31 | ONSEMI/安森美 | 25+ | 158,000 | SOT23 | |
| BAS31 | NEXPERIA/安世 | 2546+ | 348,000 | N/A | |
| BAS31 | NEXPERIA/安世 | 23+ | 128,900 | SOTN/A23 | |
| BAS31 | FAIRCHILD/仙童 | N/A | 144,787 | N/A | |
| BAS31 | NEXPERIA/安世 | 2025+ | 122,556 | SOTN/A23 | |
| BAS31-7-F | DIODES/美台 | 23 | 1,000 | 22+ | |
| BAS31-7-F | DIODES/美台 | 12+ | 2,000 | SOT23 | |
| BAS31-7-F | DIODES/美台 | 14+ | 30,000 | NA | |
| BAS31-7-F | N/A | 2020 | 800,001,064 | SMDDIP | |
| BAS31-7-F | DIODES/美台 | 26+ | 3,000 | N/A | |
| BAS31-7-F | NEXPERIA/安世 | 25+ | 50,000 | NA | |
| BAS31-7-F | DIODES/美台 | 24+ | 3,000 | N/A | |
| BAS31-D87Z | ONSEMI/安森美 | 2130+ | 9,920 | SOT23 | |
| BAS31-D87Z | N/A | 2025 | 1 | N/A | |
| BAS31-D87Z | ONSEMI/安森美 | 2025+PB | 15,000 | SOTN/A23 | |
| BAS31-D87Z | ONSEMI/安森美 | 24+ | 10,000 | SOTN/A23N/A3 | |
| BAS31-D87Z | ONSEMI/安森美 | 25+ | 40,000 | N/A | |
| BAS31-D87Z | ONSEMI/安森美 | 23+24+ | 80,000 | N/A | |
| BAS31-D87Z | NK/南科功率 | 2026+ROHS | 201,314 | SOTN/A23N/A3 | |
| BAS31-D87Z | ONSEMI/安森美 | 25+ | 900,000 | N/A | |
| BAS31-D87Z | ONSEMI/安森美 | 25+ | 36,000 | SOTN/A23N/A3 | |
| BAS31-D87Z | ONSEMI/安森美 | 22+ | 15,000 | SOTN/A23 | |
| BAS31-D87Z | ONSEMI/安森美 | 20+21+ | 34,071 | SOTN/A23N/A3 |
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