Results for D24V0L1B2LP(121)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D24V0L1B2LP | DIODES/美台 | 22+ | 300,000 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LP | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D24V0L1B2LP | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D24V0L1B2LP | ZXWILL | 2022+ | 52,300 | UN/ADFN1006N/A2 | |
| D24V0L1B2LP | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006 | |
| D24V0L1B2LP | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D24V0L1B2LP | LITESEMI/厉特半导体 | 23+ | 999,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LP-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006 | |
| D24V0L1B2LP-7B | DIODES/美台 | 21+ | 17,706 | X1N/ADFN1006 | |
| D24V0L1B2LP-7B | DIODES/美台 | 2026+ | 119,110 | DFN1006 | |
| D24V0L1B2LP-7B | DIODES/美台 | 25+ | 410,000 | N/A | |
| D24V0L1B2LP-7B | DIODES/美台 | 25+ | 40,000 | DFN2 | |
| D24V0L1B2LP-7B | DIODES/美台 | 23+ | 30,000 | N/A | |
| D24V0L1B2LP-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| D24V0L1B2LP-7B | DIODES/美台 | 21+ | 10,252 | X1N/ADFN1006 | |
| D24V0L1B2LP-7B | DIODES/美台 | 25+ | 900,000 | N/A | |
| D24V0L1B2LP-7B | DIODES/美台 | 2025+PB | 15,000 | DFNN/A1006 | |
| D24V0L1B2LP-7B | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | DFN1006N/A2L | |
| D24V0L1B2LP-7B | DIODES/美台 | 25+ | 90,000 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LP-7B | DIODES/美台 | 24+ | 108,000 | X1DFN10062 | |
| D24V0L1B2LP-7B | JGN/ASEMI/台湾金锆 | 26+ | 20,000 | DFN1006N/A2L | |
| D24V0L1B2LP-7B | Semiteh elec | 26+ | 268,589 | DFN1006 | |
| D24V0L1B2LP-7B | DIODES/美台 | 2446+ | 20,541 | UDFN | |
| D24V0L1B2LP-7B | DIODES/美台 | 25+ | 20,000 | N/A | |
| D24V0L1B2LP-7B | Diodes/Cnnpchip/新晶微 | 26+ | 127,096 | DFN1006N/A2L | |
| D24V0L1B2LP-7B | DIODES/美台 | 26+ | 158,000 | DFN1006N/A2 | |
| D24V0L1B2LP-7B | DFN | 16+ | 75,000 | DIODES | |
| D24V0L1B2LP-7B | DIODES/美台 | 24+ | 82,024 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LP-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D24V0L1B2LP-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D24V0L1B2LP-7B | DIODES/美台 | 16+ | 75,000 | DFN | |
| D24V0L1B2LP-7B | DIODES/美台 | 24+ | 200,000 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LP-7B | DIODES/美台 | 21+ | 17,706 | X1N/ADFN1006 | |
| D24V0L1B2LP-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| D24V0L1B2LP-7B | DIODES/美台 | 21+ | 17,706 | X1N/ADFN1006 | |
| D24V0L1B2LP-7B | DIODES/美台 | 2533+ | 12,250 | MULL | |
| D24V0L1B2LP-7B | DIODES/美台 | 26+ | 36,000 | SMD | |
| D24V0L1B2LPS | LITESEMI/厉特半导体 | 23+ | 999,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LPS | ZXWILL | 2022+ | 52,300 | UN/ADFN1006N/A2 | |
| D24V0L1B2LPS | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LPS | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A | |
| D24V0L1B2LPS | TSD/泰盛达 | 26+ | 30,000 | TSOT25 | |
| D24V0L1B2LPS | DIODES/美台 | 22+ | 300,000 | UN/ADFN1006N/A2(SWP) | |
| D24V0L1B2LPS | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D24V0L1B2LPS | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A | |
| D24V0L1B2LPS | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 25+ | 83,121 | UN/ADFN1006 | |
| D24V0L1B2LPS-7B | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | UN/ADFN1006 |
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