Results for D24V0L1B2LP(121)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D24V0L1B2LPS-7B | DIODES/美台 | 2025+PB | 66,000 | UN/ADFN1006N/A2SWP | |
| D24V0L1B2LPS-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| D24V0L1B2LPS-7B | DIODES/美台 | 22+ | 50,000 | DFN | |
| D24V0L1B2LPS-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| D24V0L1B2LPS-7B | DIODES/美台 | 26+ | 158,000 | DFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 26+ | 300,000 | X1DFNN/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 25+ | 600,000 | N/A | |
| D24V0L1B2LPS-7B | DIODES/美台 | 18+ | 48,000 | DFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006 | |
| D24V0L1B2LPS-7B | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1006 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 25+ | 90,000 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 26+ | 50,000 | UN/ADFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 18+ | 250,000 | DFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 26+ | 36,000 | SMD | |
| D24V0L1B2LPS-7B | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1006 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 17+18+ | 166,576 | DFN1006 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 2026+ | 119,085 | DFN1006 | |
| D24V0L1B2LPS-7B | MSKSEMI/美森科 | 26+ | 66,000 | DFN1006 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D24V0L1B2LPS-7B | LITESEMI/厉特半导体 | 23+ | 999,000 | UN/ADFN1006 | |
| D24V0L1B2LPS-7B | ZXWILL | 2022+ | 52,300 | UN/ADFN1006 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 22+ | 45,000 | X1DFN10062 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 2342 | 30,000 | N/A | |
| D24V0L1B2LPS-7B | DIODES/美台 | 24+ | 200,000 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LPS-7B | DIODES/美台 | 24+ | 82,024 | X1N/ADFN1006N/A2 | |
| D24V0L1B2LPS-7B | Diodes/Cnnpchip/新晶微 | 26+ | 127,089 | DFN1006N/A2L | |
| D24V0L1B2LPS-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D24V0L1B2LPS-7B | DIODES/美台 | 25+ | 200,000 | X1DFN10062 | |
| D24V0L1B2LPSQ | ZXWILL | 2022+ | 52,300 | UN/ADFN1616N/A2 | |
| D24V0L1B2LPSQ | DIODES/美台 | 22+ | 60,600 | UN/ADFN1006N/A2(SWP) | |
| D24V0L1B2LPSQ | DIODES/美台 | 25+ | 42,000 | UN/ADFN1006N/A2(SWP) | |
| D24V0L1B2LPSQ | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A | |
| D24V0L1B2LPSQ | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1006N/A | |
| D24V0L1B2LPSQ | TSD/泰盛达 | 26+ | 30,000 | TSOT26 | |
| D24V0L1B2LPSQ | DIODES/美台 | 24+ | 100,000 | UN/ADFN1006N/A2(SWP) | |
| D24V0L1B2LPSQ | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1616N/A2 | |
| D24V0L1B2LPSQ | LITESEMI/厉特半导体 | 23+ | 999,000 | UN/ADFN1616N/A2 | |
| D24V0L1B2LPSQ | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1616N/A2 | |
| D24V0L1B2LPSQ | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN1006 | |
| D24V0L1B2LPSQ | DIODES/美台 | 2 | 6,290 | N/A | |
| D24V0L1B2LPSQ | DIODES/美台 | 22+ | 300,000 | UN/ADFN1006N/A2(SWP) | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006 | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 22+ | 42,621 | UDFN1006N/A2 | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 22+ | 61,800 | UDFN1006N/A2 | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 2025+PB | 66,000 | UN/ADFN1006N/A2SWP | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 22282251 | 670,000 | N/A | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D24V0L1B2LPSQ-7B | DIODES/美台 | 2026+ | 119,086 | DFN1006 | |
| D24V0L1B2LPSQ-7B | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L |
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